Nanowire Field-Effect Transistor (FET)
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumpt...
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| Year of Publication: | 2021 |
| Language: | English |
| Physical Description: | 1 electronic resource (96 p.) |
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García-Loureiro, Antonio edt Nanowire Field-Effect Transistor (FET) Nanowire Field-Effect Transistor Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021 1 electronic resource (96 p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices. English History of engineering & technology bicssc random dopant drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation 3-03936-208-9 3-03936-209-7 Kalna, Karol edt Seoane, Natalia edt García-Loureiro, Antonio oth Kalna, Karol oth Seoane, Natalia oth |
| language |
English |
| format |
eBook |
| author2 |
Kalna, Karol Seoane, Natalia García-Loureiro, Antonio Kalna, Karol Seoane, Natalia |
| author_facet |
Kalna, Karol Seoane, Natalia García-Loureiro, Antonio Kalna, Karol Seoane, Natalia |
| author2_variant |
a g l agl k k kk n s ns |
| author2_role |
HerausgeberIn HerausgeberIn Sonstige Sonstige Sonstige |
| title |
Nanowire Field-Effect Transistor (FET) |
| spellingShingle |
Nanowire Field-Effect Transistor (FET) |
| title_full |
Nanowire Field-Effect Transistor (FET) |
| title_fullStr |
Nanowire Field-Effect Transistor (FET) |
| title_full_unstemmed |
Nanowire Field-Effect Transistor (FET) |
| title_auth |
Nanowire Field-Effect Transistor (FET) |
| title_alt |
Nanowire Field-Effect Transistor |
| title_new |
Nanowire Field-Effect Transistor (FET) |
| title_sort |
nanowire field-effect transistor (fet) |
| publisher |
MDPI - Multidisciplinary Digital Publishing Institute |
| publishDate |
2021 |
| physical |
1 electronic resource (96 p.) |
| isbn |
3-03936-208-9 3-03936-209-7 |
| illustrated |
Not Illustrated |
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Nanowire Field-Effect Transistor (FET) |
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