Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich

The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative couple...

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Bibliographic Details
Superior document:Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
:
Year of Publication:2013
Language:German
Series:Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
Physical Description:1 electronic resource (XIII, 217 p. p.)
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245 1 0 |a Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich 
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520 |a The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied. 
546 |a German 
653 |a power amplifier 
653 |a III-V semiconductor 
653 |a HEMT 
653 |a millimetre-wave 
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653 |a FETmillimeterwave 
653 |a Terahertz 
653 |a microstrip transmission line 
653 |a 3-5 
653 |a MMIC 
653 |a Leistungsverstärker 
653 |a Millimeterwelle 
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