High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories thei...

Full description

Saved in:
Bibliographic Details
HerausgeberIn:
Sonstige:
Year of Publication:2022
Language:English
Physical Description:1 electronic resource (210 p.)
Tags: Add Tag
No Tags, Be the first to tag this record!
id 993545265204498
ctrlnum (CKB)5680000000037676
(oapen)https://directory.doabooks.org/handle/20.500.12854/81116
(EXLCZ)995680000000037676
collection bib_alma
record_format marc
spelling Monzio Compagnoni, Christian edt
High-Density Solid-State Memory Devices and Technologies
Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
1 electronic resource (210 p.)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.
English
Technology: general issues bicssc
History of engineering & technology bicssc
resistive switching memory
in-memory computing
crosspoint array
artificial intelligence
deep learning
dielectric
RTN
TAT
Wiener-Khinchin
transient analysis
phonon
surface roughness
spectral index
power spectrum
program suspend
3D NAND Flash
Solid State Drives
MOSFET
low-frequency noise
random telegraph noise
evaluation method
array test pattern
STT-MRAM
spintronics
CoFeB
composite free layer
low power electronics
NAND Flash memory
endurance
reliability
oxide trapped charge
artificial neural networks
neuromorphic computing
NOR Flash memory arrays
program noise
pulse-width modulation
3D NAND
floating gate cell
charge-trap cell
CMOS under array
bumpless
TSV
WOW
COW
BBCube
bandwidth
yield
power consumption
thermal management
3-0365-3359-1
3-0365-3360-5
Shirota, Riichiro edt
Monzio Compagnoni, Christian oth
Shirota, Riichiro oth
language English
format eBook
author2 Shirota, Riichiro
Monzio Compagnoni, Christian
Shirota, Riichiro
author_facet Shirota, Riichiro
Monzio Compagnoni, Christian
Shirota, Riichiro
author2_variant c c m cc ccm
r s rs
author2_role HerausgeberIn
Sonstige
Sonstige
title High-Density Solid-State Memory Devices and Technologies
spellingShingle High-Density Solid-State Memory Devices and Technologies
title_full High-Density Solid-State Memory Devices and Technologies
title_fullStr High-Density Solid-State Memory Devices and Technologies
title_full_unstemmed High-Density Solid-State Memory Devices and Technologies
title_auth High-Density Solid-State Memory Devices and Technologies
title_new High-Density Solid-State Memory Devices and Technologies
title_sort high-density solid-state memory devices and technologies
publisher MDPI - Multidisciplinary Digital Publishing Institute
publishDate 2022
physical 1 electronic resource (210 p.)
isbn 3-0365-3359-1
3-0365-3360-5
illustrated Not Illustrated
work_keys_str_mv AT monziocompagnonichristian highdensitysolidstatememorydevicesandtechnologies
AT shirotariichiro highdensitysolidstatememorydevicesandtechnologies
status_str n
ids_txt_mv (CKB)5680000000037676
(oapen)https://directory.doabooks.org/handle/20.500.12854/81116
(EXLCZ)995680000000037676
carrierType_str_mv cr
is_hierarchy_title High-Density Solid-State Memory Devices and Technologies
author2_original_writing_str_mv noLinkedField
noLinkedField
noLinkedField
_version_ 1787548485143232513
fullrecord <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03413nam-a2200913z--4500</leader><controlfield tag="001">993545265204498</controlfield><controlfield tag="005">20231214132924.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr|mn|---annan</controlfield><controlfield tag="008">202205s2022 xx |||||o ||| 0|eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)5680000000037676</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(oapen)https://directory.doabooks.org/handle/20.500.12854/81116</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)995680000000037676</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Monzio Compagnoni, Christian</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">High-Density Solid-State Memory Devices and Technologies</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">Basel</subfield><subfield code="b">MDPI - Multidisciplinary Digital Publishing Institute</subfield><subfield code="c">2022</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 electronic resource (210 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Technology: general issues</subfield><subfield code="2">bicssc</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">History of engineering &amp; technology</subfield><subfield code="2">bicssc</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">resistive switching memory</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">in-memory computing</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">crosspoint array</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">artificial intelligence</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">deep learning</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">dielectric</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">RTN</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">TAT</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Wiener-Khinchin</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">transient analysis</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">phonon</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">surface roughness</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">spectral index</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">power spectrum</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">program suspend</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">3D NAND Flash</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Solid State Drives</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">MOSFET</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">low-frequency noise</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">random telegraph noise</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">evaluation method</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">array test pattern</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">STT-MRAM</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">spintronics</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">CoFeB</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">composite free layer</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">low power electronics</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">NAND Flash memory</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">endurance</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">reliability</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">oxide trapped charge</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">artificial neural networks</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">neuromorphic computing</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">NOR Flash memory arrays</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">program noise</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">pulse-width modulation</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">3D NAND</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">floating gate cell</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">charge-trap cell</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">CMOS under array</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bumpless</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">TSV</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">WOW</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">COW</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">BBCube</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bandwidth</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">yield</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">power consumption</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">thermal management</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-0365-3359-1</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-0365-3360-5</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shirota, Riichiro</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Monzio Compagnoni, Christian</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shirota, Riichiro</subfield><subfield code="4">oth</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2023-12-15 05:35:45 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2022-05-14 21:41:54 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="i">DOAB Directory of Open Access Books</subfield><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&amp;portfolio_pid=5337862190004498&amp;Force_direct=true</subfield><subfield code="Z">5337862190004498</subfield><subfield code="b">Available</subfield><subfield code="8">5337862190004498</subfield></datafield></record></collection>