Silicon-Based Nanomaterials: Technology and Applications
Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “com...
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Year of Publication: | 2019 |
Language: | English |
Physical Description: | 1 electronic resource (94 p.) |
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100 | 1 | |a Kelsall, Robert W. |4 auth | |
245 | 1 | 0 | |a Silicon-Based Nanomaterials: Technology and Applications |
246 | |a Silicon-Based Nanomaterials | ||
260 | |b MDPI - Multidisciplinary Digital Publishing Institute |c 2019 | ||
300 | |a 1 electronic resource (94 p.) | ||
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520 | |a Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems. | ||
546 | |a English | ||
653 | |a ohmic contact | ||
653 | |a graphene oxide | ||
653 | |a optical gain media | ||
653 | |a nano silica sol | ||
653 | |a in-situ growth | ||
653 | |a silicon quantum dots | ||
653 | |a gold nanoparticles | ||
653 | |a nanofabrication | ||
653 | |a thermal reduction | ||
653 | |a long-term mechanical tests | ||
653 | |a self-aligned nanowires | ||
653 | |a silicon carbide | ||
653 | |a micro-mechanism | ||
653 | |a telecom wavelengths | ||
653 | |a nanoparticles | ||
653 | |a single-crystal Si nanomembrane (Si NMs) | ||
653 | |a nanowires | ||
653 | |a localized surface plasmon resonances | ||
653 | |a C/C composites | ||
653 | |a thin film transistor | ||
653 | |a strain engineering | ||
653 | |a nanomembranes | ||
653 | |a light emitting devices | ||
653 | |a quantum photonics | ||
653 | |a ultrathin nanowires | ||
653 | |a electroluminescence enhancement | ||
653 | |a mechanical properties | ||
653 | |a group-IV semiconductors | ||
653 | |a self-assembly | ||
653 | |a silicon | ||
653 | |a SiC nanowires | ||
653 | |a fluctuating temperature-humidity conditions | ||
653 | |a TiO2 insertion layer | ||
776 | |z 3-03921-042-4 | ||
906 | |a BOOK | ||
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