Nanoelectronic Materials, Devices and Modeling
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The...
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Li, Qiliang auth Nanoelectronic Materials, Devices and Modeling MDPI - Multidisciplinary Digital Publishing Institute 2019 1 electronic resource (242 p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry. English quantum mechanical neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form 3-03921-225-7 Zhu, Hao auth |
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English |
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author |
Li, Qiliang |
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Li, Qiliang Nanoelectronic Materials, Devices and Modeling |
author_facet |
Li, Qiliang Zhu, Hao |
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q l ql |
author2 |
Zhu, Hao |
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Li, Qiliang |
title |
Nanoelectronic Materials, Devices and Modeling |
title_full |
Nanoelectronic Materials, Devices and Modeling |
title_fullStr |
Nanoelectronic Materials, Devices and Modeling |
title_full_unstemmed |
Nanoelectronic Materials, Devices and Modeling |
title_auth |
Nanoelectronic Materials, Devices and Modeling |
title_new |
Nanoelectronic Materials, Devices and Modeling |
title_sort |
nanoelectronic materials, devices and modeling |
publisher |
MDPI - Multidisciplinary Digital Publishing Institute |
publishDate |
2019 |
physical |
1 electronic resource (242 p.) |
isbn |
3-03921-226-5 3-03921-225-7 |
illustrated |
Not Illustrated |
work_keys_str_mv |
AT liqiliang nanoelectronicmaterialsdevicesandmodeling AT zhuhao nanoelectronicmaterialsdevicesandmodeling |
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(CKB)4920000000095024 (oapen)https://directory.doabooks.org/handle/20.500.12854/54256 (EXLCZ)994920000000095024 |
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Nanoelectronic Materials, Devices and Modeling |
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_version_ |
1796648853923954688 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05433nam-a2201417z--4500</leader><controlfield tag="001">993543954104498</controlfield><controlfield tag="005">20231214133547.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr|mn|---annan</controlfield><controlfield tag="008">202102s2019 xx |||||o ||| 0|eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3-03921-226-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)4920000000095024</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(oapen)https://directory.doabooks.org/handle/20.500.12854/54256</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)994920000000095024</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Li, Qiliang</subfield><subfield code="4">auth</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanoelectronic Materials, Devices and Modeling</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="b">MDPI - Multidisciplinary Digital Publishing Institute</subfield><subfield code="c">2019</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 electronic resource (242 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">quantum mechanical</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">neuromorphic computation</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">off-current (Ioff)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">double-gate tunnel field-effect-transistor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">topological insulator</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">back current blocking layer (BCBL)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">CMOS power amplifier IC</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">information integration</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">distributed Bragg</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">spike-timing-dependent plasticity</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">electron affinity</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">enhancement-mode</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">current collapse</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">gallium nitride (GaN)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">band-to-band tunneling</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">vertical field-effect transistor (VFET)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">ionic liquid</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">luminescent centres</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">thermal coupling</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">vision localization</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">PC1D</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">UAV</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">ZnO/Si</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">dual-switching transistor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">memristor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">field-effect transistor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">higher order synchronization</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">shallow trench isolation (STI)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">memristive device</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">on-current (Ion)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">low voltage</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">reflection transmision method</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">dielectric layer</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">source/drain (S/D)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">high efficiency</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">nanostructure synthesis</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">InAlN/GaN heterostructure</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">supercapacitor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">high-electron mobility transistor (HEMTs)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">heterojunction</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">p-GaN</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">recessed channel array transistor (RCAT)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">gate field effect</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">charge injection</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">saddle FinFET (S-FinFET)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">L-shaped tunnel field-effect-transistor</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">conductivity</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">energy storage</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">hierarchical</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">PECVD</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">sample grating</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">MISHEMT</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bistability</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">threshold voltage (VTH)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bandgap tuning</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">oscillatory neural networks</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">UV irradiation</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Mott transition</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">third harmonic tuning</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">topological magnetoelectric effect</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">cross-gain modulation</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">2D material</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">solar cells</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">silicon on insulator (SOI)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Green's function</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">optoelectronic devices</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">semiconductor optical amplifier</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">ZnO films</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">graphene</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">AlGaN/GaN</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">polarization effect</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">two-photon process</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">conductive atomic force microscopy (cAFM)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">2DEG density</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">vanadium dioxide</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">interface traps</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">potential drop width (PDW)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">pattern recognition</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">drain-induced barrier lowering (DIBL)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">atomic layer deposition (ALD)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">normally off power devices</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">gate-induced drain leakage (GIDL)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">insulator-metal transition (IMT)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">zinc oxide</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">synaptic device</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">subthreshold slope (SS)</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">landing</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">silicon</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">corner-effect</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">conditioned reflex</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">quantum dot</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">gallium nitride</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bismuth ions</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">conduction band offset</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">variational form</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-03921-225-7</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Hao</subfield><subfield code="4">auth</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2023-12-15 05:57:43 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2019-11-10 04:18:40 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="i">DOAB Directory of Open Access Books</subfield><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&portfolio_pid=5337498830004498&Force_direct=true</subfield><subfield code="Z">5337498830004498</subfield><subfield code="b">Available</subfield><subfield code="8">5337498830004498</subfield></datafield></record></collection> |