Nanoelectronic Materials, Devices and Modeling

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The...

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Year of Publication:2019
Language:English
Physical Description:1 electronic resource (242 p.)
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ctrlnum (CKB)4920000000095024
(oapen)https://directory.doabooks.org/handle/20.500.12854/54256
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collection bib_alma
record_format marc
spelling Li, Qiliang auth
Nanoelectronic Materials, Devices and Modeling
MDPI - Multidisciplinary Digital Publishing Institute 2019
1 electronic resource (242 p.)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
English
quantum mechanical
neuromorphic computation
off-current (Ioff)
double-gate tunnel field-effect-transistor
topological insulator
back current blocking layer (BCBL)
CMOS power amplifier IC
information integration
distributed Bragg
spike-timing-dependent plasticity
electron affinity
enhancement-mode
current collapse
gallium nitride (GaN)
band-to-band tunneling
vertical field-effect transistor (VFET)
ionic liquid
luminescent centres
thermal coupling
vision localization
PC1D
UAV
ZnO/Si
dual-switching transistor
memristor
field-effect transistor
higher order synchronization
shallow trench isolation (STI)
memristive device
on-current (Ion)
low voltage
reflection transmision method
dielectric layer
source/drain (S/D)
high efficiency
nanostructure synthesis
InAlN/GaN heterostructure
supercapacitor
high-electron mobility transistor (HEMTs)
heterojunction
p-GaN
recessed channel array transistor (RCAT)
gate field effect
charge injection
saddle FinFET (S-FinFET)
L-shaped tunnel field-effect-transistor
conductivity
energy storage
hierarchical
PECVD
sample grating
MISHEMT
bistability
threshold voltage (VTH)
bandgap tuning
oscillatory neural networks
UV irradiation
Mott transition
third harmonic tuning
topological magnetoelectric effect
cross-gain modulation
2D material
solar cells
silicon on insulator (SOI)
Green's function
optoelectronic devices
semiconductor optical amplifier
ZnO films
graphene
AlGaN/GaN
polarization effect
two-photon process
conductive atomic force microscopy (cAFM)
2DEG density
vanadium dioxide
interface traps
potential drop width (PDW)
pattern recognition
drain-induced barrier lowering (DIBL)
atomic layer deposition (ALD)
normally off power devices
gate-induced drain leakage (GIDL)
insulator-metal transition (IMT)
zinc oxide
synaptic device
subthreshold slope (SS)
landing
silicon
corner-effect
conditioned reflex
quantum dot
gallium nitride
bismuth ions
conduction band offset
variational form
3-03921-225-7
Zhu, Hao auth
language English
format eBook
author Li, Qiliang
spellingShingle Li, Qiliang
Nanoelectronic Materials, Devices and Modeling
author_facet Li, Qiliang
Zhu, Hao
author_variant q l ql
author2 Zhu, Hao
author2_variant h z hz
author_sort Li, Qiliang
title Nanoelectronic Materials, Devices and Modeling
title_full Nanoelectronic Materials, Devices and Modeling
title_fullStr Nanoelectronic Materials, Devices and Modeling
title_full_unstemmed Nanoelectronic Materials, Devices and Modeling
title_auth Nanoelectronic Materials, Devices and Modeling
title_new Nanoelectronic Materials, Devices and Modeling
title_sort nanoelectronic materials, devices and modeling
publisher MDPI - Multidisciplinary Digital Publishing Institute
publishDate 2019
physical 1 electronic resource (242 p.)
isbn 3-03921-226-5
3-03921-225-7
illustrated Not Illustrated
work_keys_str_mv AT liqiliang nanoelectronicmaterialsdevicesandmodeling
AT zhuhao nanoelectronicmaterialsdevicesandmodeling
status_str n
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carrierType_str_mv cr
is_hierarchy_title Nanoelectronic Materials, Devices and Modeling
author2_original_writing_str_mv noLinkedField
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