Advanced Memristor Modeling : Memristor Circuits and Networks

The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generations of electronic circuits and for their widespread application in all the areas of industry. Relatedly, the analysis of new efficient and advanc...

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Year of Publication:2019
Language:English
Physical Description:1 electronic resource (184 p.)
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record_format marc
spelling Mladenov, Valeri auth
Advanced Memristor Modeling Memristor Circuits and Networks
Advanced Memristor Modeling
Basel MDPI Books 2019
1 electronic resource (184 p.)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Open access Unrestricted online access star
The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generations of electronic circuits and for their widespread application in all the areas of industry. Relatedly, the analysis of new efficient and advanced electronic elements and circuits is an essential field of highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides, has been investigated since 1970 and is promising for inclusion in technologies for constructing new electronic memories. It has been established that such oxide materials have the ability to change their conductance in accordance to the applied voltage and memorizing their state for a long time interval. Similar behavior was predicted for the memristor element by Leon Chua in 1971. The memristor was proposed in accordance with symmetry considerations and the relationships between the four basic electric quantities—electric current i, voltage v, charge q and flux linkage Ψ. The memristor is a passive one-port element, together with the capacitor, inductor and resistor. The Williams Hewlett Packard (HP) research group has made a link between resistive switching devices and the memristor proposed by Chua. In addition, a number of scientific papers related to memristors and memristor devices have been issued and several models for them have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage Ψ, expressed as a time integral of the voltage v. It has the important capability of remembering the electric charge passing through its cross-section, and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for applications in high-density computer memories, artificial neural networks, and many other electronic devices.
English
Electrical engineering bicssc
engineering; modelling; memristor
3-03897-104-9
language English
format eBook
author Mladenov, Valeri
spellingShingle Mladenov, Valeri
Advanced Memristor Modeling Memristor Circuits and Networks
author_facet Mladenov, Valeri
author_variant v m vm
author_sort Mladenov, Valeri
title Advanced Memristor Modeling Memristor Circuits and Networks
title_sub Memristor Circuits and Networks
title_full Advanced Memristor Modeling Memristor Circuits and Networks
title_fullStr Advanced Memristor Modeling Memristor Circuits and Networks
title_full_unstemmed Advanced Memristor Modeling Memristor Circuits and Networks
title_auth Advanced Memristor Modeling Memristor Circuits and Networks
title_alt Advanced Memristor Modeling
title_new Advanced Memristor Modeling
title_sort advanced memristor modeling memristor circuits and networks
publisher MDPI Books
publishDate 2019
physical 1 electronic resource (184 p.)
isbn 3-03897-104-9
illustrated Not Illustrated
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