Physica status solidi / A. / Volume 98, Number 2, : December 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Scientific Programme
- Contents
- Original Papers
- On the Possibility of Multiple Increase of the Resolution of Layer-by-Layer Analysis of Materials
- Formation of Superstructures with Long Period. Microscopic Description
- On the Determination of the Partial Pair Distribution Functions in Amorphous Alloys
- Investigation of Pb1-x SnxTe Crystal Surfaces by Quantitative AES, LEED, and Kikuchi Pattern Observation
- Fluorescence Accompanying X-Ray Diffraction in the Grazing Incidence Bragg-Laue Geometry
- Local Order in High Surface Area Amorphous Silica
- Structure of Annealed Polycrystalline Silicon Films I. Recrystallization
- EXAFS in Niobium Diehaleogenides Intercalated with First-Row Transition Metals
- Textures in Twisted Nematics with Smectic C Ordering and in Smectic C Liquid Crystals
- Screening Effect on Lattice Images of Silicon
- Structural Phase Transitions in Rb2KMIIIF6 Elpasolites I. Crystal Chemistry and Calorimetric Studies
- Structural Phase Transitions in Rb2KMIIIF6 Elpasolites II. Raman Scattering and Group-Theoretical Studies of Rb2KFeF6 and Rb2KYF6
- Crystal Structure and Theoretical Symmetry Analysis of the Phase Transition Sequence in [(C2H5)4N]2PtCl6
- Lattice properties
- The Effect of Grain Growth on the Plastic Instabilities and Uniaxial Tensile Ductilities in Superplastic Alloys
- Resistivity and Thermoelectric Power Measurements on AgCd Shape Memory Alloys
- Validity of the Anionic Model of Rare Earth Iron Garnet Solubility in PbO-B2O3 Flux
- Similarity between Spinodal Decomposition and Clustering in Si Highly Doped with As
- Defects, atomistic aspects
- Specification of Dipole Complexes in Dy208-Ca0 Systems from Dielectric Relaxation Studies
- A Theory of Anomalously Amplitude-Dependent Internal Friction Peaks Due to the Interaction between Dislocation Kinks and Substitutional Solute Atoms in F.C.C. Metals
- Line Defects in AIIIBV Semiconductors
- Structural and Electrical Characterization of Boron Implanted in Preamorphized Silicon Layers
- Channeling in GaAs. A Monte Carlo Simulation of Low Energy Implants
- Effect of Point Defects on the Character of Distortions in High-Purity Molybdenum Single Crystals
- Flux Dependence of Damage Accumulation in Silicon during Ion Bombardment
- Influence of the Electric Charge of Dislocations on the Hardening of Alkali Halides
- Magnetism
- Effect of Dimensional Resonance on Outside Spin-Wave Manifold ∆Heff-Values in Ferrites
- Initial Magnetic Susceptibility and Electrical Resistivity of Fe92Zr8 Amorphous Alloy
- Thermal, Electrical, and Magnetic Properties of the Amorphous Alloys RExSi1-x (RE = Gd or Tb; x= 0.87, 0.59, 0.18)
- Localized electronic states and transitions
- Cathodo- and Photoluminescence in Rare Earth Activated Garnets of Type Ca3M2Ge3-x SixO12 (M = Al, Ga, Sc, V)
- Electric transport
- Structure of the Surface Barrier in a Critical State of an Edged Type-II Superconductor
- Anomalous Photovoltaic Effect in CdTe Films Illuminated with Monochromatic Light
- Effect of Excess Copper on the Electrical Properties of Poly crystalline Thin Films of CuInSe2
- Hopping Conduction and Defect States in Reactively Sputtered Silicon Nitride Thin Films
- Observations of the Anomalous Poole-Frenkel Effect in Al-Polyethylene-Al Thin Film Structures
- Conductivity and Polarization of NH4C1 between 150 and 500 K
- Device-related phenomena
- The Origin of Nonradiative Centers in Degraded LEDs from GaAs0.8P0.4
- Gas-Surface Reactions on Phthalocyanine Thin Films
- RF Plasma Annealing Effects at the Wet Oxidized Si/SiO2 Interface
- Errata
- Erratum to: Abnormally Deep Structural Changes in Ion-Implanted Silicon
- Erratum
- Short Notes
- Indirect Observation of the Transition from an Amorphous to a Crystalline State in Pd Film Vapor-Quenched at 77 K
- Temperature Dependence of Electromechanical Properties of LGS Crystals
- High Frequency Dielectric Dispersion in [(CH3)3NH]3 Sb2^Cl9
- Stress Induced Optical Anisotropy in Magnetic Garnet Films
- On the Electron-Irradiation Induced Defects in GaP:Zn
- Redistribution of Implanted Arsenic in a MoSi^/Polysilicon Structure by Silicidation Tempering
- On the Formation of Swirl Defects in Silicon and Germanium
- Ferromagnetic Behaviour of Non-Magnetic Samples
- Effect of Plastic Deformation on the Irreversible Mangetization in Nickel-Chromium Wire
- Magnetic Relaxation in Cobalt Following Low-Temperature Electron Irradiation
- Paramagnetic Susceptibility of the Me1-x FexCr2S4(Me = Zn,Co) Composition System
- Neutron Diffraction Study of Some Mixed Li-Ferrites
- Spin Glass Like Behaviour of a Sputter»d Cu94.6 Tb5.4 Alloy
- The Concentration Dependence of the Band Gap for CuGaxIn1-x S2 and AgGaxIn1-xS2 Solid Solutions
- The Optical Absorption Edge of Thin GeO2 Films Doped with Copper
- Crystal Growth and Spectroscopic Properties Nd3+ Ions in Potassium Bismuth Niobate
- High Temperature Drift Mobilities in High Resistivity Silicon
- Eine analytische Approximation für die Ortsabhängigkeit des Potentials bei Schottky-Randschichten
- Determination of Energy Barriers for the Photocharging of Trapping Sites Contained in ZnSe Layer of Ni-ZnSe-SiO2-Si Structure by Electrons and Holes
- Schottky Photocells on Electrodeposited CdTe Layers
- Pre-Printed Titles
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