Physica status solidi / A. / Volume 83, Number 1, : May 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Author Index
- Contents
- Review Article
- Some Regularities in the Behaviour of the Magnetic, Electrokinetic, and Superconducting Properties of Transition Metal Monocarbide and Mononitride Solid Solutions
- Original Papers
- Structure
- Electrical, Magnetic, and Structural Characterisation of [1,2-Bis(1-ethyl-4-pyridinium)ethane]2+ (7,7,8,8- Tetracyano-p-quinodimethanide)42-
- The Microstructural Properties of (β + (Ni, Al)7Hf2) Eutectics
- The Mechanism of Cell Wall Formation
- Crystallization of High-Dose Antimony-Implanted Silicon by Millisecond Pulse Laser Irradiation
- A High Resolution Electron Microscopic Study of Ordered Structures in Ni3(Ti, V) Alloys
- Pattern Variation of Evaporated Thin Films and Their Non-Pre-Excited TSEE
- A Study of the Non-Stoichiometrical Halogen and Water Content of β-FeOOH
- An X-Ray Investigation of Structural Properties and Electrical Resistivities of Liquid Al, Liquid Cu, and Liquid Al-Cu Alloys
- The Temperature Dependence of the Prepeak in the Diffraction Pattern of the Amorphous Ti61Cu16Ni23 and Ti 62.5 Cu12Ni23Si 2.5 Alloys
- Lattice properties
- Modified Plane, Radial, and Angström Temperature-Wave Techniques for the Measurement of Thermal Properties of Non-Conducting Materials
- Ferroelastic Domain Structure Dynamics and Internal Friction of KH3(SeO3)2 Single Crystals
- Thermal Conductivity of Germanium Doped with Silicon, Tin, and Aluminium
- Structural Anisotropy and Heat Capacity of NbS3
- Defects, atomistic aspects
- Deviation from Stoichiometry and Electron Transfer in PbMoO4
- Study of Ge2S3 Glass Undoped and Doped with Metals by Positron Annihilation Technique
- Determination of the Range Profiles of Boron Implanted into Si and SiO2
- Contribution to the Thermotransport in Silicate Glasses
- Dislocation Motion and Plasticity in MgO Single Crystals
- Plane-Wave X-Ray Images of Dislocations Parallel to the Diffraction Vector
- Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals
- Absence of Dilatational Defects in Deformed Cu57Zr48 Amorphous Alloy
- Internal and Friction Stresses for Al-Mg Class I High Temperature Creep Alloys
- Short-Range Reordering of Heavy Interstitials in Ta, Nb, and Fe during Relaxation and Static Strain Aging
- Magnetism
- Investigations of the Crystal and Magnetic Structure Heterogeneities of RbMnCl3
- Amorphous Co-Metal Films Produced by Sputtering
- Extended electronic states and transitions
- Surface Plasmon Modes and Energy Loss Function of Indium Thin Films on Mica Substrates
- Caractérisation optique et électrique de couches mixtes de sulfure de mercure
- X-Ray Emission Study of Bonding in SmT2 Compounds (T = Fe, Co, Ni)
- Localized electronic states and transitions
- Tin Impurity Atoms in Vacuum Deposited Amorphous Silicon
- Colour Centres in Amorphous Tungsten Trioxide Thin Films
- Charge-Carrier Recombination in Silicon Irradiated with γ-Rays of Different Energies
- The Cathodoluminescence Contrast Formation of Localized Non-Radiative Defects in Semiconductors
- The Hot Electron Energy Distribution Function in ZnS:Cu:Cl:Er Thin Films
- Electric transport
- Sm-GraSe Barrier Structures
- Electrical Conductivity of Mixtures of Conducting and Insulating Particles
- Space Charge Limited Conduction in Thin Film V2O5-P2O5-ZnO Glasses
- Thickness Dependence of DC Conductivity of Amorphous Se and Binary Amorphous Se-Te, Se-Ge, and Se-Sb Films
- Thermoelectric Figure of Merit of the System (GeTe)1-x(AgSbTe2)x
- Annealing Effects on Electrical Conductivity and Thermoelectric Power of Sintered PbTe
- Radiation-Induced Conductivity in Polymers under Continuous Irradiation
- Device-related phenomena
- Zur Berücksichtigung der Oberflächenbandverbiegung im Silizium bei Photoinjektion in MOS-Strukturen
- Investigation of the Current Density Distribution of Small Josephson Tunnel Junctions by Fourier Transformation
- Internal Electric Field-Enhanced Impurity Diffusion in GaAs 1-x Px
- A Review of Techniques to Determine the Series Resistance of Solar Cells
- RF Annealing of the Implantation-Induced Defects in Silicon Using Hydrogen Plasma
- Erratum
- Short Notes
- Control of Explosive Liquid-Phase Crystallization of Ion-Implanted Silicon Layers by Double Pulse Laser Irradiation
- The Yield of Photoelectrons of Different Energies in the X-Ray Laue Diffraction
- Optical Properties of Thin GeOx Films
- An Infrared Study of xV2O5•(1-x)B2O3 Glasses
- Dependence of Mechanoluminescence on the Microhardness and Dislocation Density in Crystals
- Specific Heat of SrTiO3 in the Range 0.5 to 6 K
- Analysis of Photoacoustically Investigated Gaseous Heat Transfer between Solid Surfaces
- Observation of Anisotropic Internal Stresses by Electroreflectance and Transverse Photovoltaic Effect Measurements
- Position Annihilation in Electron-Irradiated p-ZnGeP2 Compound
- A New Evidence for Hole-Induced Thermo-Exoemission
- A Semi-Empirical Relation between the Magnetic Susceptibility and Porosity of Sintered Iron
- Photoinduced Optical Absorption in As-Se
- Fundamental Optical and Photoelectric Properties of Poly- and Mono-Crystals of Zn3Pg2
- Effects of Heat Treatment on the Optical Absorption of Amorphous In30Se70 Films
- Photoelectrical and Optical Properties of GaSe:Yb Single Crystals
- Stimulated Emission of Er3 and Ho 3+ Ions in KLa(McO4)2 Crystals
- Temperature Dependence of Currents in Thin Films of Silicon Oxide
- Li+ Ionic Conductivity in LiNbO3
- Electrical Conduction in SnTe Thin Films
- Computer Simulation of Generation-Recombination Currents in Amorphous Silicon p-n Diode Structures
- Damage Induced Degradation of Metal Contacts on Gallium Arsenide
- Pre-Printed Titles
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