Physica status solidi / A. / Volume 85, Number 2, : October 16 / / hrsg. von Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Review Article
- Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys (II)
- Original Papers
- Structure
- On the Polarization Mixing of X-Rays. Quantum Theory of Interference of White X-Rays
- Six-Beam X-Ray Diffraction in Ge Single Crystals
- Group-to-Subgroup Relations in Space Groups. Application to the Structural Phase Transitions in the Perovskite-Type Layer Compounds RbAlF4 and RbVF4
- Fast-Electron Diffraction near a Translation Interface on Edge. The Generalized Dispersion Relation
- Fraunhofer Diffraction of X-Ray Beams at Bragg Incidence in Distorted Crystals
- Crystallization Study of Evaporated a-Se Films by Means of DTA Technique
- Lattice properties
- 87Rb NMR in Monoclinic RbD2PO4
- The Relative Stability and Phase Transition Studies of MgO and CaO Crystals
- The Atomic Size-Mismatch Contribution to the Enthalpy of Formation of Concentrated Substitutional Metallic Solid Solutions
- Study of Thermal Properties of Polycrystalline KCl, KBr, and KI in the Temperature Bange 300 to 600 K
- Defects, atomistic aspects
- Possible Amorphisation and Phase Separation of Intermetallic Mo3Si Compound under Radiation. Molecular Dynamics Study
- Formation and Parameters of Boron-Divacancy Complexes in Irradiated p-Si
- High-Temperature Creep of Equimolecular NiO-CoO Solid Solution
- On the Optimal Choice of Substrate for Hg0.8Cd0.2Te Epitaxial Layers
- Radiation Damage and Its Annealing Behaviour in InP after Recoil Implantation of 118Sb and 111In Observed by TDPAC
- Internal Friction at Low Temperature in High Purity Magnesium
- On the Annihilation of Thermal Donors in Silicon Crystals
- Modification of Concentration Profiles in Iron and Aluminium by High-Fluence Implantation of Nitrogen and Boron Ions
- On Intrinsic Stacking Faults in Polycrystalline Ni3Al
- Isochronal Annealing Study of Aggregation in Doped Alkali Halide Crystals
- Magnetism
- Magnetic Structure of y-Iron Containing Oxygen
- Transition-Induced Magnetic After-Effect in the Amorphous Alloy Fe20Ni56B24 at the Critical Temperature
- Magnetic Properties of Amorphous FexS1-xFilms (I)
- Magnetic Properties in the System (Sr1-xCax) CoO3-0
- Neutron Diffraction Studies of the Magnetic Ground State in Li-Zn Ferrite
- Extended electronic states and transitions
- Amplitude Modulation and Demodulation of Electromagnetic Waves in Magnetised Semiconducting Plasmas
- Localized electronic states and transitions
- Luminescent Properties of Zinc Silicate Doped with Gallium
- Growth, Spectral and Luminescence Study of Cubic Bi4Ge3O12:Pr3+ Crystals
- Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon
- Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C
- The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon
- Electric transport
- Temperature Dependence of Transient Radiation-Induced Conductivity in Polymers
- Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon
- Photoconductivity in Halogenated and Hydrogenated Amorphous Silicon Films
- Thermal Influence of Vacuum Deposition of Metallic Electrodes on TSC from Positively Corona-Charged Polyethylene Films
- An Ohmic Contact Test Using the Activation Energy of Steady-State Space-Charge-Limited Current
- Device-related phenomena
- Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N (I)
- Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials
- Pulsed UV Laser Processed Gold and Aluminum Ohmic Contacts on n+-GaAs
- Tunneling Surface Recombination in MS Structures on p-InAs
- Short Notes
- A Study of the Possibility of Restoration of Composition of SnTe Oxidized Epitaxial Layers by Means of NGR Spectroscopy
- Hydrogen Absorption and Crystallization in Amorphous Co90Zr10
- Anisotropy of Microhardness in Anthracene Single Crystals
- On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon
- Interaction of a Dislocation with a Crack
- A Simple Model of Small Yield Point Due to Strain Rate Change Based on the Dynamics of the Source Generated Dislocation Group
- Exponential Absorption Edge in Ge20Sb15S65 Glass Depending on Sample Preparation
- Absorption Edge Shift in the Pb0-SiO2 System
- Eigenschaften der Energieniveaus von Kobalt in Silizium
- Eigenschaften der Energieniveaus von Rhodium und Iridium in Silizium
- Thermoluminescence and Thermally Stimulated Exoelectron Emission in Glass and Sintered CaB4O7: CuCl2
- Exoelectron Emission from Calcium Sulfate Excited by Slow Electrons
- Remarks about a New, Constructive Method for the Analysis of Thermally Stimulated Relaxation Processes (TSRP)
- Electrical Resistivity of Amorphous Co-Rich FeCo-SiB Alloys
- On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons
- Unusual Effect of Tellurium Doping on the Electrical Properties of Bulk Amorphous Selenium
- Ohmic AuGe Contacts on n-GaAs Produced by Nanosecond Laser Pulse Irradiation
- The Influence of Microwaves on the Current-Voltage Characteristic of Nb-NbOx-Pb Josephson Tunnel Junctions
- Dependence of I-U Characteristics of GaAs n+-n-n+ Diodes on the Active Region Length
- Sensitive Pressure Gauge on the Basis of Pure n-InSb
- Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b)
- Classification Scheme — Continued
- Backmatter
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