Physica status solidi / A. / Volume 91, Number 2, : October 16 / / ed. by Görlich.
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Other title: | Frontmatter -- Classification Scheme -- THIS ISSUE IS DEDICATED TO PROFESSOR Dr. Dr. h. c. Dr. E. h. PAUL GÖRLICH IN HONOUR OF HIS 80th BIRTHDAY -- Contents -- Review Articles -- Impurity Conduction of Chalcogenide Yitreous Semiconductors -- Magnetic Materials for Recording2 -- Original Papers -- Structure -- Observation en microscopie électronique à haute résolution d'oxydes à grande maille (c-Dy203) et interprétation des images obtenues -- Crystallization of Amorphous Fe-Si Films -- Tine Structure of X-Ray Interferograms III. Complex Interference Systems -- Electron Microscopic Study of the Domains and Interfaces in MV4S8 (M = Fe, Co, Ni) -- Crystallization of the Metallic Glass Fe^NLtoBäo during Isochronal Annealing in Argon and Hydrogen -- Phase Transitions between the Quasicrystalline, Crystalline, and Amorphous Phases in Al-14 at% Mn -- Investigations of the Phase Transition in V3O5 Using Energy Dispersive X-Ray Diffraction and Synchrotron Radiation White Beam X-Ray Topography -- On the Influence of the Pre-Ageing Conditions on the Reversion Behaviour of an Al-1.87 at% Cu Alloy -- Formation of Ni Silicides on As-Doped Silicon -- Negative Secondary Ion Emission Influenced by Alkali Atoms -- On the Position of the Critical Temperature for the Dissolution of Guinier-Preston Zones in an Al-15 at% Zn Alloy -- Direct Evidence of Post-Nucleation Decoration -- Calculated Defocus Diffraction Contrast and Lattice Fringe Imaging of Small Crystal Defects -- The Direct Observation of "Discommensurations" in Barium Sodium Niobate (BSN) and Its Homologues -- Lattice properties -- X-Ray Study of the Thermal Expansion Anisotropy in AgGaS2 and AgInS2 Compounds over the Temperature Range from 80 to 650 K -- Defects, atomistic aspects -- Hydrogen Implantation into Silicon -- Dislocation Dissociation and Electrical Properties of Plastically Deformed Germanium Single Crystals -- The Investigation of the Shock Deformation Kinetics and Dislocation Dynamics upon Pulse Loading of Csl, NaCl, and LiF Crystals -- The Trapping of Vacancies by Impurity Vacancy Complexes in Alkali Halide Crystals -- In-Situ Straining of Cu-10Ni-6Sn Spinodal Alloy in the High Yoltage Electron Microscope -- Dislocation Behaviour and the Anomalous Yield-Stress Peak in a β-Brass Single Crystal -- Cathodoluminescence from Electron-Irradiated ZnO -- Effect of Grain Boundaries on the Out-Diffusion Rate of Volatile Solutes from Thin Wires -- Magnetism -- Effect of Dimensional Resonance and Damping Constant on Various Parameters Used in Magneto-Microwave Kerr Effect in Ferrites -- Magnetic Domains in Antiferromagnetic ZnCr2X4 (X = S, Se) as Seen by Magnetization Measurements -- The Mechanism of Thermal Remagnetization of Permanent Magnets -- On the Magnetic Contribution to the Free Enthalpy of Vacancy Formation in Ferromagnetic Crystals -- Rate Dependence of the Field-Cooled Magnetisation of a Fine Particle System -- Extended electronic states and transitions -- Absorption Edge of Pure and Selenium-Doped α-Sulfur Single Crystals -- Localized electronic states and transitions -- A Study of Semiinsulating GaAs Surfaces by Thermostimulated Currents -- Infra-Red Spectra, Electron Spin Resonance Spectra, and Density of (TeO2)100-x-(WO3)x and (TeO2)100-x-(ZnCl2)x Glasses -- Investigations of the Orange Luminescence of PbMoO4 Crystals -- Dotierungseigenschaften von Kobalt in Silizium -- Sensitized IR-Emission of Ho 3+ , Er 3+ , and Tm 3+ in 12R-Ba3LaBW2O12 (B = Er, Tin, Yb) and 12R-Sr3LaYbW2O12 -- On the Determination of Deep Level Concentration Profiles by DLTS Measurements -- Electric transport -- Kelaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon -- Heating Rate Dependence of Peak and Position of Maximum Depolarization Current in ITC Measurements -- Study of Tunnel Currents of Electrons and Holes in Thermal Si02 with Charge Accumulation in the Dielectric -- Transient Currents in Dielectrics at Non-Linear Law of Single Injection -- Doping Effects in Transient Radiation-Induced Conductivity of Polymers -- Reverse Annealing Effect in the Neutron-Irradiated Si:P System -- Investigation of Dilute Tungsten Alloys by Electrical Transport Measurements -- Device-related phenomena -- Investigation of AIIIBV-Si Heterojunctions Grown by Laser Deposition -- On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation -- Short Notes -- Possible Incommensurate Structure in 4,4'-Dichlor obi phenyl Sulphone as Studied by the 35 CI Nuclei NQR -- Phase Diagram of the ZnP2-CdP2 System -- On the Signals Generated by Lead Zirconium Titanate (PZT) Ceramics when Irradiated with Microsecond Pulsed TEA-CO2 Laser Pulses -- On the Core of the Thermal Donors in Silicon -- Implantation Effect on Transport Properties of Mobile Ions in Silicon Dioxide -- On the Energy Change during the Grain Boundary Structure from Non-Equilibrium State to Equilibrium State -- Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction -- Crystal Structure and Magnetic Properties of MnAs 0.95 P 0.05 -- Effect of Annealing Temperature and Magnetizing Frequency on Barkhausen Jumps in Rolled Steel -- Covalency Effects and the Pressure Dependence of the Mössbauer Line Shifts for Spinel-Type Ferrites -- Optical Absorption and Thermoluminescence of AC Field-Treated LiF Single Crystals later Irradiated withX-Rays -- Long-Wavelength Intrinsic Photoconductivity in PbSnTe:In -- AC Losses of NbN -- On the Resonance Behaviour of a Thin Film DC-SQUID -- I-U Characteristics of Strongly Indium-Doped Lead Tin Telluride at Low Temperatures -- Explanation of the AC Josephson Effect in Nb-NbOx-Pb Tunnel Junctions with the Stewart-Mc Cumber Model -- Variable Pinch-Off GaAs MESFET -- Simple Method for the Determination of the Doping Profile in MIS Structures with Implanted Shallow p-n Junction -- Fast Response Time Measurements in Transistors Using Picosecond Optoelectronic Switches -- Pre-Printed Titles -- Manuscripts and letters for physica status solidi (b) — basic research and physica status solidi (a) — applied research |
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Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112500941 9783110637342 |
DOI: | 10.1515/9783112500941 |
Accès: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | ed. by Görlich. |
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