Physica status solidi / A. / Volume 73, Number 2, : October 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Contents
- Systematic List
- Original Papers
- The Static and Dynamic Hysteresis Responsible for the Dislocational Amplitude Dependent Internal Friction I. Theory
- On the Correlation between the Non-Monotonous Character of Flow Stress and the Mobile Dislocation Density
- Atomic Configurations of Point Defects in Intermetallic Nb2Sn Compound
- Activation of High As and Sb Concentrations in Silicon by Laser Irradiation
- 2D Phase Transitions at High Densities
- The Effect of Twin Microstructure on the Magnetic Properties of Alloys with CuAul Superlattice Ordering
- Bulk Charging of Dielectric Films by Low Energy Electrons
- Tricritical Point Induced by Atomic Substitution in SbSexSi-x I4)
- Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects
- Optical Properties and Structure of Thin Indium Films
- Dielectric Properties of Bismuth-Doped NaCl Single Crystals
- Dislocations dissociées dans ZnSe
- Unified Theory of Grain Boundaries
- Conditions for Extremal Values of the Optical Dielectric Constant in Binary Mixtures
- Influence of the Real Fermi Surface on the Longitudinal Magnetoresistance Size Effect of Single Crystal Copper Whiskers
- New Results on Superconducting Nb-Sn Sinter Material Applied for Electron Microscope Lenses
- Triple Crystal Diffractometer Investigations of Imperfections in Silicon Crystals with Laue-Case Diffraction
- Temperature-Dependent Electrostriction Coefficient and Pseudoproper Phase Transition in TSCC
- Magnetic Properties and Structure of TbPt
- Silicide Formation Resulting from the Interfacial Reaction of Silicon and Thin Films of Ir-V Alloys and Bilayers
- A Re-Examination of Long-Range Ordering at Fe-25 at% Ni
- Electrical Transport Properties of Epitaxial Films of Pb1-xSn xTe
- On the General-Order Kinetics in Thermoluminescence
- Domaines et interfaces engendrées au cours d'une transformation cristal lographique coopérative — application au cas de la transformation hexagonale monoclinique des sesquioxydes de terres rares II. Position relative et raccordement des variantes de domaines de rotation et de translation:raccordement en étoile
- On the Reduction of Orthorhombic MoO<SUB>2</SUB> to MoO2
- Spatial Resolution and Dense Random Packing
- Simple Method ¡or Determination of the Interface Trap Density at the Midgap in MOS Structures
- On the Location of the Interface Fermi Level in Metal-Semiconductor Schottky-Barrier Contacts
- Thermoelectric Behaviour of Copper Wires Electroplated with Nickel
- Thermoluminescence of Z1-Centres in KCl2Br 1-x :Ca2+ Crystals
- Study of the Influence of Manganese and Lanthanum Oxides on the Band Structure of Pb(Zr, Ti) O3
- Model to Predict the Tensile Strength of Sintered Materials
- The Polycenter Crystallization of Amorphous Silicon Layers at Pulse Annealing
- Models for Color Centers in Smoky Quartz
- Thermal Annealing of V-Bands and Their Correlation with Thermoluminescence Spectra in X-Irradiated Li-Doped KBr Crystals
- On the Ferroelectric Structural Phase Transitions in Solid Solutions
- Studies on the Diffusion of Impurities in II-VI Compounds Based on the Two-Sample Luminescence Method
- Generation and Recombination Images of Dislocations in Si by Scanning Microscopy
- Reverse Photon Echo as a Method of Investigation of Resonant Medium Parameters
- Thermal Hall Hysteresis Loops in Thin Amorphous HoCo Films
- Magnetocrystalline Anisotropy of Tetragonal Copper Ferrite
- Short Notes
- Images
- Deposition arid Structure of Different Composite Ni-Cr Thin Films
- On the Formation of a New Superstructure in the Zirconium-Aluminium System
- Explosive Liquid-Phase Crystallization of Ion-Implanted Silicon
- Study of the Nonlinear Recombination Process in Silicon by the Saturated Photovoltage Transient Method
- Thermoluminescence Sensitization in LiF (TLD 100) at Different Post-Annealing Temperatures
- Effect of Type and Amount of Pre-Torsional Deformation on the Creep Characteristics of Zinc Wire Samples
- Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers
- Electrical Conductivity of Fe(PY)3Cl3 -PY Complex Single Crystals near the Structural Phase Transition
- On the Photoconductivity Response of GaAs Doped with Chromium and Oxygen
- Cation Distribution and Magnetic Properties of BaZn2Fe 16-x InxO27 and BaZn2Fe 16-x ScxO27 Hexagonal Ferrites
- Evaluation of Space-Charge-Limited Currents in a-Si:H/c-Si Heteroj unction
- Uncommon Mechanoluminescence Spectra of Certain Organic and Inorganic Crystals
- Temperature Dependence of Spontaneous Magnetization of the FeCr2-x InxS4 System
- ESR and Dielectric Anomalies in Amorphous Cu-Phthalocyanine-Iodine Compounds
- Influence of Surface Recombination-Generation in the Depletion Layer on the I-U Characteristic of a p-n Junction
- Influence of Temperature on Structure and Properties of Mn 1+xSb 1-xSnx Alloys
- Analysis of the Cross Slip Process in Alkali Halides
- Radiation Damage Studies of Dichromate Doped Alums
- Infrared Study of the Structural Phase Transition in a Ternary ID Salt (TMA*)(TCNQ)2/3 ( I3)1/3
- Magnetic and FMR Investigation of the Structural Phase Transition in Cu-Ferrite with Cooperative Jahn-Teller Effect
- Diffusion-Isolated MISS Devices
- Comparison of Isochronal and Time-Linear Thermal Annealing Curves and Conclusions about the Correlation Glow-Peak Nature of Traps and the Mechanism of TSEE for α-Al2O3
- Some Radiation-Optical Properties of Fluorphlogopite with Admixture of Vanadium
- Effect of F-F* Conversion on the Lattice Parameter of Electrolytically Coloured KC1, KBr, and KI Crystals
- Comparison of Irradiation- and Annealing-Induced Changes of the Intrinsic Emission Intensity in Electron-Bombarded Undeformed and Plastically Deformed GaAs
- Die Natur der festen Lösungen der überschüssigen Komponenten in unlegiertem Galliumantimonid
- Sektion Physik der Wilhelm-Pieck-Universitat Rostock ' (b) Energy Distribution of Exoelectrons from NaCl (111) and (100) Surfaces
- Study of n-GaAs MPS Diodes with Spin-on SiO2 Layer
- Effect of Stoichiometric Disturbances in A B Compounds during Ion Implantation
- Electrical Properties of Lanthanum-Aluminium Glass
- Light Emission from Hot Electrons in Zinc Oxide MS Diodes
- Pressure Dependence of the Hyperfine Magnetic Field at 101 Ta in the Intermetallic Compound (Zr0,5Hf 0.5)Fe2
- Ferromagnetic Resonance Investigations in MnSb 1-x Inx Films
- The Deficiency Effect of Iron on the Conduction Mechanism of Co 0.5 Zn 0,5 Fe2O4
- Magnetic Disaccommodation in Ordered NigFe Following Either Cold-Work or Low-Temperature Electron Irradiation
- Pre-Printed Titles
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