Physica status solidi / A. / Volume 51, Number 2, : February 16 / / ed. by Görlich.

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Superior document:Title is part of eBook package: De Gruyter DGBA Reference Works <1990
MitwirkendeR:
Akutsu, J.,
Albrecht, G.,
Alekseevskii, N. E.,
Alekseevsky, N.,
Ali, M. P.,
Almeida, A.,
Alstrup, O.,
Amelinckx, S.,
Aminov, L. K.,
Andrasi, M.,
Ardelean, I.,
Ayano, T.,
Aymerich-Humet, X.,
Azimov, S. A.,
Balagurov, A. M.,
Bergholz, W.,
Bohmhammel, K.,
Brissenden, S.,
Bässlee, H.,
Chen, H. S.,
Cizek, A.,
Colaitis, D.,
Czapla, Z.,
Debras, G.,
Dekhtyar, I. Ya.,
Delavignette, P.,
Deryagin, A. V.,
Dettmann, F.,
Dobrovolskii, N. M.,
Dubertret, A.,
Dunlop, A.,
Durand, F.,
Dutt, I. D.,
Dyck, D. Van,
Dzhafarov, T. D.,
Edelman, F. L.,
Fedchenko, R. G.,
Flietner, H.,
Forgacs, G.,
Fueukawa, K.,
Fujimoto, S.,
Fussel, W.,
Gardner, J. W.,
Gegechkori, T. O.,
Gheorghiu, Z.,
Gilles, J. M.,
Glinchuk, K. D.,
Godlewski, M.,
Gouskov, A.,
Gouskov, L.,
Grebe, G.,
Grekhov, V. M.,
Guds, E. S.,
Gulamov, Sh. A.,
Gutmanas, E. Y.,
Haasen, P.,
Hashimoto, S.,
Heiliger, W.,
Hess, H.,
Hildebrandt, D.,
Hinckley, S.,
Hoffmann, H.-J.,
Hohlfeld, C.,
Hora, H.,
Horan, S. E.,
Ibrahim, M. M.,
Ignat, M.,
Iida, A.,
Illingworth, J.,
Inal, O. T.,
Ivanov, A. O.,
Iwasaki, H.,
Jones, G. A.,
Jousset, J. C.,
Kachlishvili, Z. S.,
Kaminskii, A. A.,
Kamiura, Y.,
Kapitanov, E. V.,
Katulevskii, Yu. A.,
Kawamura, K.,
Kelly, J. C.,
Kettschau, A.,
Kirihata, H.,
Kislovskii, E. N.,
Kleinefeld, Th.,
Kohra, K.,
Korner, A.,
Kovacevic, I.,
Krasnoprbov, E.,
Krautz, E.,
Kudrevatykh, N. V.,
Lann, A. Le,
Lebedev, E. A.,
Levitin, R. Z.,
Liptuga, A. I.,
Lis, T.,
Lisovskii, I. P.,
Litovchenko, V. G.,
Litvinov, R. O.,
Lobastov, Yu. P.,
Lorenzelli, N.,
Lorinczy, A.,
Lucas, A. A.,
Luchinin, V. V.,
Malyutenko, V. K.,
Manns, R.,
Mathur, P. C.,
Mehra, R. M.,
Mende, H. H.,
Mieskes, W.,
Mitin, V. V.,
Mochalov, I. V.,
Morandi, G.,
Moronchuk, I. E.,
Morozov, N. P.,
Muminov, R. A.,
Murr, L. E.,
Nava, R.,
Nebauer, E.,
Norde, H.,
Ohno, H.,
Oshcherin, B. N.,
Peev, N. S.,
Petrashen, P. Y.,
Piccolo, R.,
Pincevicius, A.,
Popov, Yu. F.,
Prinz, F.,
Prokhorovich, A. V.,
Puchalska, I. B.,
Pushkarskii, V. I.,
Raman, Y.,
Ramanand, A.,
Ranade, J. D.,
Rao, K. V. S. Rama,
Rao, R. Ramji,
Rehberg, U.,
Reimer, B.,
Reisser, H.,
Richter, W.,
Roy, M. Deb,
Sacharova, S. G.,
Sakalas, A.,
Samoc, A.,
Samoc, M.,
Sarkisov, S. E.,
Savenko, B. N.,
Schmid, H.,
Schröter, W.,
Serra-Mestres, F.,
Shimizu, H.,
Shuvalov, L. A.,
Shvarts, Yu. M.,
Shyam, Radhey,
Sivaramakrishnan, V.,
Sivaraman, S.,
Skoryatina, E. A.,
Slifkin, L. M.,
Sob, M.,
Sobczyk, L.,
Sorge, G.,
Suleimanov, Yu. M.,
Süptitz, P.,
Süssmann, H.,
Tairov, Yu. M.,
Tetelbaum, D. I.,
Tkhorik, Yu. A.,
Tove, P. A.,
Travitzky, N.,
Trojnar, E.,
Varin, R. A.,
Vecchio, G. Lo,
Vijayaraghavan, M. S.,
Viscakas, J.,
Vovnenko, V. I.,
Vronskaya, E. V.,
Waseda, Y.,
Wasim, S.,
Weyer, G.,
Whitworth, R. W.,
Wolf, G.,
Yakovlev, E. N.,
Yamada, H.,
Yasuda, N.,
Zahn, W.,
Zaleski, A. J.,
HerausgeberIn:
Place / Publishing House:Berlin ;, Boston : : De Gruyter, , [2022]
©1979
Year of Publication:2022
Edition:Reprint 2021
Language:English
Series:Physica status solidi / A. ; Volume 51, Number 2
Online Access:
Physical Description:1 online resource (504 p.)
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Other title:Frontmatter --
Classification Scheme --
Physica status solidi (a) applied research --
Contents --
Original Papers --
Structural Analysis of Amorphous Pd0.8Si0.2 Alloy by the Dense Random Packing Model of Differently Sized Compressible Spheres --
Influence oi the Capture of Charge Carriers upon the I-U Curves of Hot Electron Semiconductors with Account of Phonon Heating --
Double Injection of a Strongly Degenerate Plasma --
The Role of Substrate Dislocations and Grain Boundaries in the Nucleation and Growth of Thin Electrochemical Overgrowths --
Thermal Conductivity of y-Irradiated a-Quartz below 10 K --
A Method for Observing the Ferroelectric Domain Structure by Using a Time-of-Flight Neutron Diffractometer --
The Structure of Silicon Nitride Films (III) --
On the Interpretation of TEM Images of p-n Junctions --
Photoleitfähigkeit dicht gesinterter Zinksilikate --
Singularities in the Magnetic and Superconducting Properties of YbFexMo6S8 --
Investigation of Radiation Damage in Ion Implanted Silicon Crystals by Pendellösung Topography --
Subthreshold Defect Generation and Annealing in Silicon by Intense Electron Beam Bombardment --
Influence of Synthesis Conditions on the Energy Distribution in Photoluminescence Spectra of SiC Epitaxial Layers --
Negative and Positive Photoplastic Effect in CdTe --
Fast Hole Transport in Polyvinylcarbazole --
Dielectric Constant of the Bis-(p-Toluene Sulphonate) of 2,4-Hexadiyne-1,6-Diol during Solid State Polymerization --
Comparison of Mössbauer Spectra of 57Co in Silicon for High- Temperature Ion-Implanted and for Diffused Samples --
An Internal Friction Study of Stress-Induced Migration and Aggregation of Solute Ions in Silver Bromide Single Crystals --
Irradiation du fer à 20 K par les neutrons rapides et par les produits de fission de l'uranium 235 --
Calculations for Optimizing the Magnification of the Magneto-Optic Kerr Effect by Interference Layers on Iron Whiskers --
Electrical Properties of Junctions between Ge Films and Monocrystalline Silicon --
A Development of Kronberg's Model for {1012} Twins in H.C.P. Metals --
Anisotropy of Spectroscopic Characteristics in the Biaxial YAlO3- Nd3+ Laser Crystals --
The Influence oi an Electric Field on the Flow Stress of Crystals of NaCl --
Intensity of Laue Diffracted Beams in the General Case of Diffraction in an Elastically Bent Crystal --
Separate Measurements of Dynamical and Kinematical X-Ray-Diffractions from Silicon Crystals with a Triple Crystal Diffractometer --
Magneto-Optical Properties of Cu-Substituted Manganese-Antimony Films --
The Biréfringent Effects of Magnetic Colloid Applied to the Study of Magnetic Domain Structures --
Observation of Overpressurized Bubbles in Helium-Irradiated Aluminium Films --
Creep of the Lamellar Al-CuAl2 Composite (II) --
The Effect of Potassium Contamination of Tungsten on Filament-Metallized Devices --
Specific Heat of Holmium and Terbium --
Resonant Tunneling Current for General Junction Potential Barrier --
Structure of Glassy Zr-Cu-and Nb-Ni Alloys --
New Shallow Acceptors Produced in Germanium by Quenching --
Ferroelectric Properties of NH4HSeO4 Crystals --
Asymmetrical Equilibrium Positions and Line Tensions of Composite Dislocations --
Double Injection into Structures with a Low-Conductivity Region (II) --
Radiation Defect Formation at Ion Implantation of Semiconductors in the Presence of Force Fields --
Mossbauer Investigation of SnO under Hydrostatic Pressure up to 41 kbar --
Study of Non-Linear Extrinsic Luminescence in GaAs (II) --
Long Period Superstructures Related to Partial Ordering in Ni3±xTe2 as Studied by Means of Electron Diffraction --
A Microdomain Model Analysis for Diffuse X-Ray Scattering from Quenched CuPt Alloy --
Emission of CaO Phosphors Activated by Eu and Tb --
Short Notes --
Formation of Exoelectron Emission Centers by Slow Electron Impact --
Positron Annihilation in Aluminium, Subjected to the Thermocyclic Treatment --
On the Distribution of the Magnetic Field of the Transport Current in Type- II Superconductor --
Effect of Hydrostatic Pressure on the Ferroelectric Phase Transition in NH4IO3 --
Magnetostriction of Single Crystals of Intermetallic R2Co17 (R = Ho, Er, Tm, Lu) Compounds --
Diffuse Reflectance Spectra of xFe2O3 • (1 — x) [3 B2O3 • PbO] Glasses --
Anisotropy of the Transverse Magnetoresistance in p-Ge Films on GaAs --
The Determination of the Intrinsic Concentration and Effective Mass of Carriers in Semiconductors by an Optical Method --
Microwave Conductivity Measurements in CdTe --
Effect of Random Variation in Impurity Concentration on Fermi Level in n-Type Silicon --
Angular Distribution in Sputtering of Metals by 10 keV Inert-Gas Ions --
The Influence of Internal Field Non-Uniformity in Ferromagnetic Samples on the Magnetization Process in the High Magnetic Field Region --
Specific Memory Effect in MOS Structures --
Negative Magnetoresistance of an Amorphous Se-Te-Ge Sample --
Investigation of Trap Levels in GaAs Schottky Diodes by Admittance Spectroscopy --
On Surface Energy and Compressibility of A2B4C52 Semiconducting Compounds --
Elastic Compliances and Ultrasonic Attenuation in (NH4)2BeF4 in the Temperature Range from 170 to 190 K --
A Monolithic Thin Film DC-SQUID --
The Validity of the CSL Model of Grain Boundary Structure for Describing Grain Boundary Behaviour --
Thermally Stimulated Current with the Participation of Two Trapping Levels --
Zur Anisotropie der thermoelektrisehen Eigenschaften von p-SbxBi2-xTe3 --
Broadening of Electrodiffusion Profiles at High Electric Fields in Glassy As2Se3:Cu --
Resistivity Anisotropy in the Layer Plane of GaTe --
A Note on the Photomagnetoelectric Effect --
The Diffusion and Electric Activity of Co in Epitaxial GaAs --
Pre-printed Titles --
Pre-printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) --
Classification Scheme — Continued --
Backmatter
Format:Mode of access: Internet via World Wide Web.
ISBN:9783112497623
9783110637342
DOI:10.1515/9783112497623
Access:restricted access
Hierarchical level:Monograph
Statement of Responsibility: ed. by Görlich.