Physica status solidi / A. / Volume 87, Number 2, : February 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Contents
- Original Papers
- Structure
- On the Ordering Mechanism of Ni2Mo
- An X-Ray Wave Theory for Heavily Distorted Crystals
- Ruby Structure Peculiarities Derived from X-Ray Diffraction Data
- Properties and Structure of Silicon Oxynitride Films Obtained in a Hydrazine Plasma
- Void Swelling of Ferritic Steel during 1 MeV Electron Irradiation
- Measurements of the Backscattering of 20 to 60 keV Electrons from Double Layers at Various Angles of Incidence
- Determination of Long-Range Order Parameter in Alloys by Means of Electron Diffraction in the Electron Microscope
- Local Tetragonality and Atomic Structure in Nb3Sn Superconductor Studied by High Resolution Electron Microscopy
- On the Influence of Crystal Orientation on the High Resolution Image Contrast of Polytypes
- A New Method for the Interpretation of Energy Distributions Measured on Secondary Ions
- Contrast Investigations of Surface Acoustic Waves by Stroboscopic Topography
- Observation of Domain Structure in a (111) Oriented Grain oi Fe (Si) by X-Ray White Beam Topography
- Twinning of the Hexagonal (A) Structure of Rare Earth Sesquioxides
- A New Method for Measuring the Mixed Splay-Bend Elasticity and the Anchoring Strength in a Nematic Film
- Lattice properties
- Thermal Conductivity and Specific Heat of an Epoxy Resin/Epoxy Resin Composite Material at Low Temperatures
- Defects, atomistic aspects
- Strength, Plasticity, and Fracture of Ribbons of Fe5Co70Si15B10 Amorphous Alloy
- Effect of Normal Stresses on Yield Stress of Molybdenum Single Crystals at Slip on the Plane (211)
- Analysis of Kic and Its Temperature Dependence of Metals by a Simplified Dislocation Model
- The Superposition of Thermal Activation in Dislocation Movement
- Diffuse X-Ray Scattering from Neutron-Irradiated Silicon Doped with Boron
- Investigation of Lattice Strain in Proton-Irradiated GaP by a Modified Auleytner Technique
- The Integrated Intensities of the Laue-Diffracted X-Rays for Monocrystals Containing Macroscopically Homogeneously Distributed Defects
- Magnetism
- Changes of the Magnetic Properties of the Nearly Non-Magnetostrictive Amorphous Alloy CossFesNiioSinBie by Annealing under Tensile Stress
- Magnetic and Dielectric Eelaxations of Fe3O4 and Some Ferrites
- Localized electronic states and transitions
- Optically Induced Photomemory by 1 to 1.35 eV Photons in the Near-Intrinsic Spectral Eegion on Semiinsulating Bulk GaAs
- Hole-Induced Exoelectron Emission and Luminescence of Corundum Doped with Mg
- The Influence of Coulomb Screening and of NNi-Pairs on the Recombination of Bound Excitons in GraAs 1-X Px Mixed Crystals
- On the Dominant Recombination Level of Platinum in Silicon
- Electric transport
- The Effect of Annealing and Hydrogenation on the Dislocation Conduction in Silicon
- The Criteria of Diffusionless Solution Validity in the Theory of Exclusion in "Super-Pure" Semiconductors
- On the Determination of the Carrier Concentration in Large-Grain Polycrystalline InP, GaAs, and GaP by Hall Effect Measurements
- Analysis of Gralvanomagnetic Parameters in Semi-Insulating GaAs with Respect to the Three-Band Model
- Device-related phenomena
- Study of Degradation of Diode Structures by the Use of Probes
- The MISS Device
- A Regeneration Model for Conducting Filaments in MIM Diodes
- Current-Voltage Characteristics of Diodes with and without Light
- Comparing Furnace to Laser Annealing in Ion Implanted Surface Passivated MINP Solar Cells
- Erratum
- Fraunhofer Diffraction of X - Bay Beams at Bragg Incidence in Distorted Crystals
- Short Notes
- The Determination of the Distribution Function of Activation Energies of Structural Changes in Amorphous Se
- Theoretical Evidence for Opposite Moving Phase Fronts during Ultrafast Solidification Processes
- Structure and Chemical Composition of RF-Sputtered Boron Nitride Films
- Phase Diagram of the ZnP2-ZnAs2 System
- Spatial Distribution of the Components in the Au/GaAs System after Scanning Laser Annealing
- Calculation of the Ga-Al-Sb Phase Diagram Using the Redlich-Kister Expression
- The Interaction between Moving Domain Walls in Rochelle Salt Crystals
- The Effect of Non-Stoichiometry on Thermal Vibrations in TiCx
- The Effect of Doping on the Motion of Partial Dislocations in Silicon
- Effect of Carbon on the Minority Carrier Lifetime in Heat-Treated Oxygen-Containing Silicon
- Change of Magnetic Resonance Parameters in FeBOgiNiO Induced by Radiation ( λ = 1.06 μm)
- Reorientation of Domain Walls in a Garnet Film under the Action of an AC Magnetic Field
- Difference between Domain Wall Motion in Single Ciystal and Polycrystalline YIG Observed by Pulsed NMR
- Photo-Induced Thermoluminescence of X-Irradiated α-Al2O3
- Time Resolved Spectra in CuGaS2
- Flash-Lamp Annealing of Si-SiO2 Transition Layer Defects
- The Influence of the Phase Transformation on the Luminescence oi NbPO5
- Dielectric Properties of Tourmaline
- Thermopower in Amorphous Fe 1-x Six Films
- Change in the Hall Coefficient with Magnetic Field in Silicon, Irradiated by Neutrons
- The Physical and Geometrical Magnetoresistance of n-Si Irradiated by Neutrons
- On the Properties of Amorphous Silicon Films and Amorphous Si-Crystalline Si Heterojunction
- Saturation and Oscillation of Current in Semiconductors Subjected to Uniaxial Deformation
- Metal-(Tunnel) Insulator-Semiconductor Switch (MISS) with Negative Resistances both in Forward and Reverse Directions
- Pre-Printed Titles
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