Physica status solidi / A. / Volume 11, Number 2, : June 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Review Article
- Condensation of Non-Equilibrium Charge Carriers in Semiconductors
- Original Papers
- On the Thermoactive Nature of Plastic Deformation of a-Al2O3 Crystals
- Dislocations Energy in Deformed Copper Crystals
- Thermostimulated Conductivity in Organic Dyes (Rhodamine 6G)
- Study of the Mechanism of Radiative Recombination in Vitreous and Monocrystalline Arsenic Selenide
- Near Infrared Optical and Photoelectric Properties of Cu2O (III)
- Free Carrier Reflectivity in Optically Homogeneous Silicon
- Thickness Dependence of the Electrical Transport Properties of Germanium Films
- Susceptibility and Lattice Parameter of Single K 1-x RbxI Crystals
- Cadmium Diffused InSb Tunnel Junctions
- New Efficient Method for Calculating Hot Electron Effects Applied to n-Ge
- An Effect of Simultaneous Reflection on Anomalous Transmission Patterns of Germanium
- Properties of 1 MeV Electron-Irradiated Defect Centers in p-Type Silicon
- High-Field Domain Solutions in a Radial Geometry
- A New Model for the CuxS:CdS Photovoltaic Cell
- Field Emission and Surface States on ZnO (0001)
- Twinning Faults in Epitaxial Films of Germanium Telluride and GeTe-SnTe Alloys
- Slow Wall Motion in Oxidized Permalloy Films
- The Influence of Point-Defect Clusters on Fatigue Hardening of Copper Single Crystals
- Effect of Pressure on the Curie Point of Cr1-xTe System with the Pseudo-NiAs-Type Structure
- Diffusion of Thallium in Selenium and on the Reactivity of Both Elements
- Displaced Lines in Kikuchi Patterns
- Relaxation Measurements on Ferromagnetic Rare Earth Hydroxides
- Double-Acceptor Cathodoluminescence in Zinc Telluride
- Preparation and Electrical Properties of Al-AIN-Si Structures
- Some Aspects of the Growth and Structure of Electroless Deposited Films
- The Plastic Deformation Behavior of Mo Single Crystals under Compression
- General Transport Theory of Noise in p - n Junction-Like Devices (IV)
- Electronic Properties of the Si—SiO2 Interface as a Function of Oxide Growth Conditions (II)
- Internal Friction in Nickel Containing Hydrogen Effect of Relaxation and Trapping of Dislocations by Hydrogen
- Ionic Conductivity of Single Crystals of CsCl
- The Preparation and Optical Properties of Small Silver Particles in Glass
- Stage I Recovery of Molybdenum Irradiated at 4.2 °K with Electrons of Different Energies
- Charge Transport through the Cadmium-Selenium Interface
- Evolution of Ferroelectric Domains in TGS Single Crystals
- Kinetics oi the B2 - B1 Phase Transition in CsCl
- NMR of 59Co in K3Co(CN)6 (I)
- The Heat Capacity of Lead from 300 to 850 °K: Conversion of Cp to Cv for Solid Lead
- On the Theory of Thermal Switching in Semiconducting Devices (I)
- The Recovery of Cold-Worked Chromium
- Low-Temperature Phase Transformation in the Vanadium-Hydrogen System
- Détermination des éléments de macle pour les macles mécaniques des sesquioxydes de terres rares de structure monoclinique
- Investigation of Thermal Oxide Films of Silicon by Infrared Absorption
- Temperature Dependence of Some Properties of NaTh2(PO4)3 Ferroelectric Crystals
- Short Notes
- The Ordering of Hydrogen in p-Tantalum Hydride
- Crystal Perfection of Tetraphenyl Tin and Its Isomorphs
- Radiation Damage Induced by Channeling of High Energy Electrons
- Investigation of Plastically Deformed NaCl by X-Ray Topography and Electron Microscopy
- Lithium Nuclear Magnetic Resonance in Lithium Formate Monohydrate
- Superconducting Energy Gaps and Transition Temperatures of Disordered Cadmium and Zinc Films
- The Influence of a High-Conducting Bubble in VO2 Switching Devices
- Superconductivity in the Palladium-Hydrogen and Palladium- Nickel-Hydrogen Systems
- Retarding Field Dependences of Thermostimulated Electron Emission (TSEE) from KCl-In and KCI-Ag
- L'alliage 60%Cu-20%Ni-20%Mn à la température critique
- Preparation and Some Properties of Ternary CdxZn1-xS Polycrystalline Thin Films
- Electroluminescence from Heterojunctions on Polycrystalline Selenium Basis
- Importance of Internal Electric Fields in TSCD Experiments in Amorphous Solids
- Investigation of the Influence of Doping on Field Quenching in CdS
- Regular Behaviour of Solid Solutions of KH2(1-n)D2nPO4 Single Crystals
- Anisotropy of Angular Distribution of Radiation Due to Positron Annihilation on the Surface of Mo Single Crystals
- Anisotropy of Angular Distribution of Radiation Due to Positron Annihilation on the Surface of Mo Single Crystals
- Erratum
- Pre-printed Titles
- Pre-printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b)
- Classification Scheme — Continued
- Backmatter
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