Physica status solidi / B. / Volume 131, Number 2, : October 1.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Physica status solidi (b) basic research
- Contents
- Review Article
- Relations between the Refractive Index and Energy Gap oi Semiconductors
- Original Papers and Short Notes
- Structure
- The Tensor Reflection Coefficient for the Surface Diffraction
- Atomic Ordering in Multicomponent Alloys
- Kinetics of Surface Segregation in Binary Alloys
- Lattice properties
- Lattice Theory of Fourth-Order Elastic Constants of Primitive Lattices
- Lattice Vibrations of V2O5
- Physical Properties of Ion-Implanted Laser Annealed n-Type Germanium
- Ionicity and Static Ionic Charge
- Many-Body Contribution to the Energy of Metals with B.C.C. Lattice
- Volume Dependence of Dielectric Properties of Some Fluorite-Structure Crystals
- Defects, atomistic aspects
- The Nature of Two Intense Si-H IR Stretching Bands in FZ-Si:H
- Measurements of Proton Channeling Energy Losses in Silicon in the Intermediate Energy Region
- Dislocations and Energy of Grain Boundaries in Crystal Structures with Covalent Bonds
- Small Vacancy Clusters in Nickel
- Magnetism
- Theory of Absorption and Scattering of Light by Singlet-Triplet Magnetic Systems
- The Magnetic Hyperfine Field for 119Sn Atoms in GdMnSi Intermetallic Compound
- The Random Field Ising Model in 2 + e Dimensions
- Frequency Dependence of the AC Susceptibility of the Reentrant System CdCr 2x In 2-2x S 4 (0.85 < x < 1)
- On the Atomic Limit of the s-f Model
- Extended electronic states and transitions
- Electronic Contribution to the Ordering Energy of a Binary Alloy
- Many-Body Theory for the Dense Exciton Gas of Direct Semiconductors
- Secondary Emission Spectra and Energy Relaxation of Polaritons in Layer Polar Semiconductors
- The Narrow Bands of Exciton Absorption in Polar Solids and Alloys
- Charge Self-Consistent Tight-Binding Parameters
- Self-Consistent Tight-Binding Method for Total Energy Calculations of Tetrahedral Semiconductors Including Surfaces and Defects
- Wavelength Modulated Spectra of a-Ag 0.7 Zn 0.3 near the Optical Absorption Edge
- Stochastic Liouville Equation Model for Nonperiodic Systems and Finite Temperatures
- Localized electronic states and transitions
- Shake-Effect in Radiative Auger Recombination of Carriers on Two-Electron Impurity Centres in Semiconductors
- Critical Lengths for Formation of Kink Structures in Finite Trans-Polyacethylene Chains
- Low Energy Electron Exchange Excitation of 4f Transitions and Location of 4f Levels in Rare Earths
- Photoinduced Optical Absorption of Cr 4+ in Semi-Insulating GaAs:Cr
- Optical and Electrical Properties of Vanadium-Doped GaAs
- Electroabsorption for Deep Level to Band Transitions Accompanied by Multiphonon Processes
- Transient Absorption of Xe and Kr Guest Atoms in Ar Crystals
- Electric transport
- Influence of Real Structure in the Interfacial Region on the Maxwell-Wagner Effect
- Pb 1-x Gd x Te a New Semimagnetic Semiconductor with Rare Earths
- The Spontaneous Resistivity Anisotropy of Iron-Based Alloys
- New Aspects in the Theory of Impact Ionization
- Short Notes
- X-Ray Diffraction by Vibrating Crystals
- Isotopic Shift and Mode Interaction in K(D x H 1-x) 2 PO 4 Crystals
- On the Nature of Quadratic Electrooptic Effect in LiP
- An Analysis of the Classical Arguments Concerning Forecasts for the Zl Centre Formation in Alkali Halides
- The Theory of Hydrostatic Pressure Dependence of the Tricritical Temperature of the FeCl2 Metamagnet
- On the Spin Reorientation in R 2 Fe 14 B Compounds
- A Cooperative System in a Random Field: A Look on Its Thermodynamics
- Contributions to the Muffin-Tin Potential in Band Structure Calculations
- Temperature Anomalies of Exciton Absorption in GeO 2
- X-Ray Spectroscopic Investigation of the Electronic Structure and Chemical Bond of the Semiconductors Sn2P2S6 and Tl3PS4
- Magneto-Optical Investigations in the Submillimeter Wavelength Range on p-InSb Bicrystals
- Magneto-Optical Investigations on n-InSb in the Far Infrared
- Discrete Saturation of the Optical Absorption Line of Pr 3+ in CaF 2 under the Condition of Pumping
- Donor-Acceptor Pair Transitions in AglnS 2
- Changes in the Spectrum of Thermally Stimulated Emission from CaF 2: Mn at Low Temperatures
- EPR of Tl 2+Doped Incommensurate K2SeO4
- Sum Rules for Tunneling Density of States
- The Anharmonicity Influence on the Proton Conductivity of an Hydrogen- Bonded Chain
- Carrier Mobility Determination in Inversion Layers of Anodized InSb MOS Structures
- Pro-Printed Titles
- Pro-Printed Titles of papers to be published in the next issues of physica status solidi (b) and physica status solidi (a)
- Classification Scheme —Continued
- Backmatter
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