Physica status solidi / A. / Volume 75, Number 1, : January 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Review Article
- Failure Physics of Integrated Circuits and Relationship to Reliability
- Original Papers
- Application of Hyperbolic Temperature Variation to the Analysis of Continuous and Stepwise Isochronal Curves and to the Problem of Quenching in Vacancies
- Grain-Boundary Deformation in Nickel Irradiated by α-Particles
- Injection and Thermodepolarization Currents in YbGa2Se4 Single Crystals
- Velocity Overshoot of Electrons in GaAs with Space Charge and Non-Uniform Field
- Electrical Resistivity of Some Directionally-Solidified Aluminum-Based Eutectic Alloys
- High-Field DC Conductivity in n-Type CdS Single Crystals Annealed in Molten Indium
- Luminescent Centre Formation Processes in Activated CdS Phosphors
- Dislocations in Deformed ZnSe Single Crystals as Studied by Weak-Beam Electron Microscopy
- Development of Faulted Dislocation Dipoles in Silicon during High Temperature Deformation
- Incoherent Light Annealing of Phosphorus-Doped Polycrystalline Silicon
- Easy Magnetization Axes in Materials with Combined Cubic and Uniaxial Anisotropics
- Anomalous Behaviour of Nonlinear Dielectric, Elastic, and Electromechanical Coefficients at Ferroelectric Phase Transitions
- Monte-Carlo Calculation of Electron Attenuation in SiO2
- Influence of Bulk and Interface Properties on the Electric Transport in ABO3 Perovskites
- TDPAC Investigation of 111Cd in Silicon after Recoil Implantation of the Parent Nuclei 111In
- A Simple Approach to the Analysis of Ion Collision Cascade in Solids Based on the Shock Wave Model
- On the Structure of the Precipitation-Free Zone in Two Al-Zn-Mg Alloys after Various Heat Treatments
- Thin-Film Photodetectors with High Quantum Yields Achieved by Induced Resonance Total Absorption
- The Efficiency of Electron Impact Excited Luminescence in ZnS Thin Film Devices
- The Influence of Substrate Temperature on the Oriented Growth of Ni and Ni2Si on Si(111)
- Breakdown Voltage Modeling in Mesa Power Devices
- Single Crystal 2,4-Hexadiynylene-Bis (p-Toluenesulfonate): Mastic Properties and Phase Transitions in the Monomer and Polymer
- Analysis of Resistivity, Hall Effect, and Magnetoresistance Measurements of Thin Bismuth Films by Means of an Anisotropic Two-Carrier Model
- Annealing Behaviour of Dilute FeCu, FeMn, and FeTi Alloys in the Temperature Range up to Stage III, Following Low-Temperature Electron Irradiation
- Xenon Ion Irradiation of α-Fe
- Calorimetric Determination of the Formation Energy for an Amorphous Layer on a Crystalline Silicon Substrate
- Recombination at Dislocations in Silicon
- Thermoluminescence of Z Centres in LiF (TLD-100) at Elevated Irradiation Temperatures
- Temperature Dependence of Intrinsic Magnetic Hardness in Some Rare-Earth Pseudobinary Compounds and Amorphous Materials
- Photogenerated Carrier Conduction Mechanisms for Schottky a-Si:H Solar Cells
- A Mössbauer-Spectroscopy Study of the Annealing of Supersaturated Solutions of 57Co in Silicon
- Low-Temperature Plasticity of CsBr and Inertial Effect of Dislocation Motion
- Effective Lifetime for Polycrystalline Solar Cells
- Specific Heat of Uranium Dioxide (UO2) between 0.3 and 50 K
- A Combined Atomistic and Monte Carlo Simulation of Point Defect-Dislocation Interactions
- Absolute Energy of the Nitrogen-Related Electron Trap in Gallium Phosphide
- The Crystal Structure and Coercive Force of SmCo5 Sintered Permanent Magnets
- Erratum
- Short Notes
- New Data on Stimulated Emission of Nd3+ Ions in Disordered Crystals with Scheelite Structure
- Détermination des paramètres de la cristallisation de couches minces de sélénium amorphe par microscopie optique
- Superconducting Properties of LaMo6S8 Thin Films
- AES Studies on Thin Film MoSi2
- Mean Charge Depth in Non-Metallized Electrets
- Electric Field Enhanced Electron Emission from Gold Acceptor Level and A-Centre in Silicon
- Ferromagnetic Resonance in Single Particles of Amorphous F e81.5B14.5Si4
- Fluage du germanium sous différentes orientations
- Phase Transition Behaviour of VO 2
- Energy Transfer from Ce3+ to Eu3+ in (Y, Gd)F3
- Some Peculiarities of High Temperature Sensitization in CdS
- Ionenpaare zwischen Chrom und flachen Akzeptoren in Silizium
- Structural Features of Pd76B24 Amorphous Alloy
- Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation
- Quantum Yield of Current Carriers Excited by Electron Beams and Electron Penetration Depth in Thin GaP Films
- On the Electron Effective Mass in n-CuInTe2
- Electrical Properties of H+-Irradiated p-ZnGeAs2
- A Metastable Electron Compound Formed by Ion Irradiation
- A Theoretical Introduction for a Coincidence Site Lattice Base Computation
- Measurement of Nonlinear Electrooptic Effects in KDP Crystals
- An Infrared Study of the Glass System CaO-B2O3 • AL2 O3 • xFe2-O3 (0<x<1)
- Low-Temperature Anomalies in the Plasticity of Crystalline Materials
- Deep Level Transient Spectroscopy in TiO2:Nb
- X-Ray Diffraction Pattern and Morphology of Superconducting Nb3Sn Layer Grown on a Poly crystalline Nb Substrate of (111) Main Texture
- Decomposition of Supersaturated Antimony Solutions in Silicon Created by Pulsed Annealing of Ion-Doped Layers
- Pre-Printed Titles
- Classification Scheme
- Manuscripts and letters
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