Physica status solidi / A. / Volume 49, Number 1, : September 16, 1978 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Author Index
- IN HONOUR OF HIS 60th BIRTHDAY
- Contents
- Systematic List
- The Physics of the Photovoltaic Effect
- Interpretation of Surface Phenomena on ZnO by the Compensation Model
- Reconstructed Surfaces
- Optical Investigation of the Cubic-Tetragonal Phase Transition in BaTiOs Single Crystals
- Heat Capacities and Thermodynamic Properties of α-Monoclinic Selenium in the Range 3 to 300 K
- Temperature Dependence of the Magnetoresistance in CdO
- Zur Struktur amorpher metallischer Schichten des Systems Germanium-Kupfer
- Work Function of Irradiated Real and Cleaned Indium Antimonide Surfaces
- Creep and Dislocation Velocities in Gallium Arsenide
- Electrical Resistivity of Amorphous Sb Films and Sb-Au Films
- Low-Frequency Current Noise of GaAs Epitaxial Layers between 4.4 and 300 K
- Systematic Absences in Low Energy Electron Diffraction
- Electrical Conductivity of Passivated Si2Te3 Single Crystals
- Pyroelectric Effect in PTS
- Degradation of Carrier Lifetime in Silicon Crystals at Room Temperature
- Solubility Curves in High-Temperature Melts ior the Growth of Single Crystals of Rare Earth Vanadates and Phosphates
- Zum Einfluß von Nickel-Clustern auf den spezifischen elektrischen Widerstand von paramagnetischen Kupfer-Nickel-Legierungen
- Determination of the Temperature Dependence of the Capture Cross-Sections of the Gold Acceptor Level and of the Temperature of Current Filaments in Silicon pin Diodes
- Effect of Reabsorbed Recombination Radiation on Photoluminescence and Photoconductivity in a Semi-Infinite Direct-Gap Semiconductor
- Photovoltage at the Metal-CdS Schottky Contact
- Investigation of Surface Properties of CdS by Means of Photoreflectance in the Exciton Region
- Absorption in Indium Antimonide and Arsenide Crystals Doped with Various Admixtures
- Etude par microscopie électronique des phénomènes d'intercroissance dans les siliconiobates de baryum
- NMR and Magnetic Susceptibility of Intermetallic Compounds ZrV2, Zr 0.99 Pt 0.01 V2, and Zr 0.9 Fe 0.1 V 2
- F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad The Influence of y-Irradiation on the Degradation of Red-Emitting GaP LED's
- Electron and Hole Conduction in Silicon Nitride at Moderate Electric Fields
- Plasmon Mechanism for Secondary Breakdown
- X-Ray Induced Paramagnetic States and Luminescence in AS2S3 and As2Se3
- Experimental Study of Crack Propagation in Brittle Amorphous Solids
- A Comparative Study oi Zinc Tracer Diffusion Profiles in LEC, SSD, and CVD GaP
- Surface Influences of Glass Substrates on Lattice Parameters and Phase Transition Temperature of Evaporated Ge Thin Films
- A Yery Simple Method for Profiling the Ion-Implanted Si-Surface
- Study by Electron Microscopy of Some Twinned Gold Crystals with Variations in Thickness
- Investigations on the Diffusion of Implanted Zinc in GaAs 1-x Px by Ion Microprobe
- Defect Annealing and Transport Properties in High-Purity InSb Irradiated at 80 K
- Properties of Quantum Interference Devices with V-VOx-Pb Tunnel Junctions
- About a Relation between Microhardness and the Average Radius of the Guinier-Preston Zones in Al-Zn Alloys
- Growth, Spectroscopic Investigations, and Some New Stimulated Emission Data of Gd2 Ga5O12 Nd 3+ Single Crystals
- Investigation of Solid-Solid Reactions oi Au Films on Silicon
- On the Lattice Transformation in Plastically Deformed V3Si Single Crystals Studied by the Rossel Technique
- The Spectral Dependence of the Photoneutralization Cross-Section of Oxygen in GraP Near the Threshold
- A High Resolution Study of Ordering in Au4Mn 2
- Two-Stage Laser Annealing of Lattice Disorder in Phosphorus Implanted Silicon
- The Role of Dimers and Trimers in the Aggregation of Impurity-Vacancy Dipoles in Alkali Halides
- Effect of a Density Gradient on the Electromagnetic Wave Instability in Semiconductor Plasmas
- Effect of Nonstoichiometry on the Electrical Conductivity of Erbium Oxide Films
- Structural Properties of Polycrystalline Ge-Metal Films
- A Structural Study of Metallic Glasses Containing Boron (Fe-B, Co-B, and Ni-B)
- Photovoltaic Operation of Nonuniformly Doped Intrinsic Photoconductors
- Effect of Laser Beam Irradiation on the Electrophysical Properties of the Interface in Boron Ion Implanted MIS Structures
- Interphase Coincidence Boundaries in Au-Si and Au-CaF2 Systems
- Short Notes
- Voltage Dependence on Precipitation Contrast
- Submicroscopical Magnetization Structures in Permalloy Films Induced by Fields Normal to the Film Plane
- Thin Films of the One-Packed Polytype of ZnIn2S4(I)
- Cathodoluminescence from Grain Boundaries in MgO and GaP
- Preparation and Investigation of ZnS-CuGaS2 Heterojunctions
- EPR Study of the Annealing Behaviour of Neutron-Trans mutation-Doped Silicon
- On the Magnetostriction of Grain-Oriented Ferromagnetic Material
- Low-Temperature Phase-Transition in Urea
- Structural Relaxation in Metallic Glasses
- Magnetic Phase Diagram of the Dilute Cr-Sb Alloy System
- SCL Currents and Trap Distribution in Polycrystalline Tetracene
- Analysis of Mn2+EPR Spectra in Polycrystals Using Bir's Method to Account for the Transition Probability
- Thermionic-Field Emission from a Metal into Organic Polymer Semiconductor Films
- Paramagnetic Resonance of Mn2+in Na2 S Single Crystals
- On the Pressure Variation of the Excessive Specific Heat Associated with Vacancies
- Influence of Anisotropie Short-Range'Order on Magnetic Properties of the Amorphous Ferrimagnet Gd-Co
- The Influence of Ion Bombardment on the Magnetic Anisotropy in Evaporated Amorphous Gd-Co Films
- Note on FMR Absorption in a Low Resistivity Ferrite Cylinder
- Preparation of Superconducting Nb3Au Diffusion Layers
- Contribution to the Technology of Gd-Co Films
- Activation Analysis of Plastic Deformation of Ni3 Al-10 at% Fe
- Mossbauer and X-Ray Studies of Fe1,67 Ge
- On the Electrical Resistivity of PdHx
- Pre-printed Titles
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