Physica status solidi / A. / Volume 64, Number 1, : March 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Contents
- Author Index
- Twenty Five Years of Semiconductor-Grade Silicon
- Etude de la phase a des alliages Cu-Al
- Analytic Approximations for Describing the Irradiation Growth of Zirconium-Base Alloys (II)
- On the Nature of Colour Centres in Ultramarine and Blue Alkali Borate Glasses Containing Sulphur
- Formation of Ultrathin Oxide Films on Silicon in RF Oxygen Plasma
- On the Possibility of Having Phasers
- DLTS Method Using a Single Temperature Scanning
- Electrical Resistivity of Fe-Rich Fe-Pd Alloys between 77 and 1250 K
- Factors Affecting Microhardness Measurements on NaCl Crystals
- Micro Inversion Domains Formed during the Crystallization of the Amorphous Alloy Fe40Ni40P14B6
- Activation Energy and Activation Volume of Dislocation Movement through Randomly Distributed Point Obstacles
- Thermoluminescence of Z2 Centers in X-Irradiated Ca-Doped KCl Crystals
- X-Ray Diffraction Study of Debye Temperature and Charge Distribution in Tantalum Monocarbide
- The Annealing Characteristics of Arsenic-Implanted Silicon Investigated at Low Temperatures
- On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C
- Electrical Conduction in Reactively Sputtered Silicon Nitride Films at Medium Field Strengths
- Magnetic Relaxation in Electron-Irradiated Ordered Ni3Fe
- On the Effect of Halogens on Proton Processes in the Si-SiO2 Structures
- Impurity Diffusion of AI in Ni Single Crystals Studied by Secondary Ion Mass Spectrometry (SIMS)
- Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System
- Modulation-Spectroscopic Investigations of Defect Centres in PbMoO4 Crystals
- Dotierungseigenschaften von Eisen in Silizium
- Diffusion and Solubility of Chromium 51 in Silver Single Crystals
- Surface Erosion during Annealing of MIIIXV:FIIb Systems and Its Reduction
- A New Attempt for Understanding Temperature-Dependent Thresholds in Lead Salt Injection Lasers
- Electrical Properties of Grain Boundaries in n-Type and p-Type GaP
- Investigation of the K2NiF4-Type Layer Oxide Fluorides Sr2FeO3+zF1-x(0<x<0.20)
- About the Asymmetries in Mossbauer Spectra of Magnetic Amorphous Transition Metal-Metalloid Alloys
- Etude des franges de moirés en microscopie électronique par la théorie dynamique á N ondes et application aux doubles couches Sb-Bi
- Dielectric Dependence of EL Brightness of Powdered Phosphor and Particle Size Distribution
- Color Centers in Irradiated Durene Crystals
- Conductivity and Crystallization of Amorphous Selenium
- Recrystallization near Low-Angle [001] Tilt Boundaries Following Cobalt Implantation in Bicrystalline Thin Films of Gold
- Môssbauer Study of the Temperature Dependence of the Magnetization Direction and the Hyperfine Interactions in the Laves Phase Compound GdFe2
- The Elastic Constants of Ni3Al at 0 and 23.5 °C
- Induced Perpendicular Anisotropy and Surface Crystallization in Amorphous Fe78B12Si10 Ribbons
- Errors Due to Lack of Contact in Measurements of Dielectric Relaxation Parameters for Solid Powders
- On the Theory of External Photoeffect Accompanying X-Ray Diffraction in an Ideal Crystal with Disturbed Surface Layer
- Crystal and Magnetic Structure of the NiMnGe1-nSin System
- High-Pressure Polymorphism of Antimony
- The Scattering of Ultrasonic Waves by Polycrystals
- Mechanoluminescence and Piezoelectric Behaviour of Molecular Crystals
- Laser Annealing of Silicon Wafers at 10.6 μm
- Effect of Quenching and X-Ray Irradiation on the Dielectric Properties of Pbl2 Single Crystals
- Erratum
- Erratum
- Drift Mobility in Insulating Barium Titanate Ceramics
- Observation of Ferroelectric Domains in Gel Grown PbHPO4 Crystals
- Investigation of the Ec - 0.55 eV Level of Iron in Silicon
- Effect of Hydrostatic Pressure on the Electrical Resistivity of Cr and Cr-Co Alloys at Room Temperature
- Far Infrared Spectra of NH4HSeO4
- The Effect of Neutron Irradiation on the Electrical Resistivity of Amorphous Fe47Ni25B18Si10 Alloys
- Electrical Properties of Quinolinium (TCNQ)2
- The Mean Kinetic Energy of Sputtered Atoms as a Function of the Angle of Emission
- Untersuchung des homogenen Gebietes in unlegiertem Galliumantimonid
- Occurrence of AC Loss Minimum in Type II Superconductors
- The Fine Structure of the 0.84 eV No-Phonon Luminescence in GaAs:Cr
- Inductance of Small Window Type Tunnel Junctions
- 1/f Noise in Si Avalanche Diodes at X-Band
- On the Possible Mechanism of Misfit Dislocation Generation
- Saturated Open Circuit Photovoltage - a New Method for Measuring the Carrier Lifetime at High Excitation Level
- Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon
- Evidence for Glide of Charged Dislocations on {111} Planes in NaCl Crystals
- High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon
- Infrared Absorption of Hydrogen in Proton-Implanted GaP
- On the Effect of Phase Transformation on the Steady State Creep of Cobalt
- Differences in Plastic Deformation Behaviour of CZ- and FZ-Grown Silicon Crystals
- Of papers to b': published in the next issues of physica status solidi (a) and physica status solidi (b)
- Backmatter
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