Physica status solidi / A. / Volume 79, Number 1, : Septemmber 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Contents
- Systematic List
- Review Article
- Photostimulated Diffusion in Semiconductors
- Original Papers
- The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge
- Anisotropy and Exchange Effects in Heavy Rare-Earth-Cobalt Compounds of the RCo5 Type
- Atomic Configurations of Interstitials in Intermetallic Compound Nb3Sn
- Characterization of Deep Energy Levels in Mercuric Iodide
- Amorphous Silicon-Phosphorus Layers
- Anomalies in the Optical and Electrical Properties of Cr-Al Alloys
- Pressure and Temperature Dependence of the Mechanoluminescence of γ-Irradiated Alkali Halide Crystals
- Electrical Studies on (Mo/W)Se2 Single Crystals
- On the Coercive Field of the Nearly Non-Magnetostrictive Amorphous Ferromagnetic Alloy Co58Ni10Fe5Si11B16
- High-Temperature Internal Friction Peaks of Pure Aluminium
- Atomic Structure and Magnetic Properties of the Pseudobinary Alloys Fe3(Al, Si)
- Micron-Scaled Spectral-Resolved Cathodoluminescence of Grains in Bariumtitanate Ceramics
- On the Size-Shape Relation of Gruinier-Preston Zones and α`R-Precipitates in an Al-6.8 at% Zn Alloy
- Energy Spectra of Backscattered Electrons for Solid Films and Double Layers by Use of Werner's Analytic Model
- Photoluminescence Decay in Amorphous Silicon Alloys
- Effect of Post-Irradiation Deformation on Thermoluminescence Spectra of KCl:Ca and NaCl: Ca Crystals
- Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals
- Temperature and Thickness Dependence of Electrical Conductivity of Flash-Evaporated InSb Films
- Influence of Substrate Deformations on Interface Structures
- Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers
- On the Flux Jumps in Hard Superconductors
- Magnetic and Mössbauer Studies of Some Mixed Cobaltites of the Lanthanides and Alkali Metals
- Trap-Assisted Tunneling in MIS and Schottky Structures
- Thermoluminescence of Thallium-Doped BaFCl
- Diffusion of Water in NaCl Bicrystals
- Analysis of Thermoluminescence Data Dominated by Second-Order Kinetics
- Structural Phase Transition of CsPbCl3 below Room Temperature
- Mechanism of Solid State Transformations in Single Crystals of ZnxCd1-x S
- Deformation of α-β Brass with Oriented and Equiaxed Duplex Boundaries
- The Silver Iodide-Thallium Iodide Pseudo-Binary System
- Heat Capacity of Diatomic Molecules Adsorbed on a Periodic Substrate and the Localized-to-Mobile Transition
- Determination of Pitch in Chiral Smectic C DOBAMBC
- A Mechanism for the Effect of Doping on the Silicon Native Oxide Thickness
- An Electrochemical Evidence of the O2 Photodesorption from n-TiO2 Surface
- Deviations from Matthiessen's Rule in the Nickel-Chromium System
- Strengthening of GaAs by Impurity Atom-Vacancy Complexes
- Short Note
- Figures
- Study of the 25 K NpO2 Phase Transition by a Neutron Oscillation Camera
- Annealing of Implanted Silicon under the Action of Microsecond Pulsed TEA-CO2 Laser Radiation
- On the Role of Surface Oxides in the Processes of Metal Etching
- Comparison of Fast Electron and Thermal Annealing of Proton Bombarded Silicon - X-Ray and IR Spectroscopy Study
- Dislocation Mobility in Hydrostatic ally Compressed KBr Crystals
- Electrical Properties of Junctions between Sputter Deposited Silicon Films and Monocrystalline Silicon
- Stress Effects on the Switching Voltage of Metal-SnO2-Si(n)-Si(p+) Devices
- Cation Mixing and the AC Conductivity of CdInGaS4
- Electrical and Structural Characterisation of (DBzB P)(TCNQ)4
- Pulse Radiation Annealing of Capless GaAs
- Influence of Growth Dislocations on Low Temperature Conductivity in Irradiated p-Germanium
- Low-Temperature Specific Heat of Vapour-Deposited Gex Se1-x Glass (x = 0.3)
- Effect of Illumination on Current-Voltage Characteristics of GdIn3Sg6 Single Crystals
- Simulation of Collision Cascades in Intermetallic V2Hf Compounds
- PGa Antisite Defect in Zn-Implanted GaA0.1P0.9 LED
- On the Hole Mobility of CuGaSe2
- Determination of p-n Junctions in InP/GaInAsP Laser Heterostructures Using a Profilometer
- Determination of Nonlinear Elastic Coefficients by Resonant Methods
- Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100
- Reply to "Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100" by S. P. Kathuria and C. M. Sunta
- Dependence of the Ambipolar Diffusion in Silicon on the Carrier Density
- The Effect of Low Oxygen Concentrations on the Photoluminescence of Vitreous Selenium
- Critical Composition of Antiferromagnetic Ordering in UNxC1-x
- The Hampered, Sideways Motion of a Single Domain Wall in Rochelle Salt Crystals
- Electrical Properties of Vapour Phase Grown (ZnSe)x (CdTe)1-xSingle Crystals
- Photovoltaic Behaviour of Rhodamine 6G Schottky-Type Cells
- Pre-Printed Titles
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