Physica status solidi / A. / Volume 91, Number 1, : September 16 / / ed. by Görlich.
Saved in:
Table of Contents:
- Frontmatter
- Contents
- Original Papers
- Pressure-Induced Structural Transition in SrS
- Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films
- Mössbauer Studies of Corrosion and Inhibition
- Lattice properties
- Theory of Melting. III. Nature of the Molten Glasses
- Third-Order Elastic Constants for Divalent Metal Oxides from Model Potentials
- Defects, atomistic aspects
- On the Behaviour oi Interaction of Copper Atoms with Lattice Defects in Quenched and Cold-Worked Ni-Cu Alloys
- Dynamic Characteristics of Radiation Defects in Silicon
- Deformation Studies on Cu-Ni-Sn Spinodal Alloys
- Dislocations in SmS Single Crystals
- Acoustic and Electron Microscopy Study of the Dislocation Structure in MgO Crystals
- Defects in Crystals under Pressure
- Magnetism
- Neutron Diffraction Study of the Spinel CoAlFeO4
- Magnetic B-T Phase Diagram of Anion Substituted MnAs. Magnetocaloric Experiments
- Mössbauer, Electrical, and Magnetic Studies of the Sn-Doped Ni3Fe Alloy
- Remanent Magnetization in Randomly Distributed Cubic Particles
- Extended electronic states and transitions
- Optical Parameters of Chemically Deposited Tin Disulphide
- The Anisotropy of Refraction Nonlinearity and Vector Self-Diffraction in the Wide-Gap Semiconductors of CdS Type
- Localized electronic states and transitions
- Dotierungseigenschaften von Rhodium und Iridium in Silizium
- U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres
- Gold Solid Solution Decay in Silicon. II. Optical Nuclear Polarization Data
- Studies of Long-Wave Luminescence of Zinc Selenide Monocrystals
- On the Analysis of Complex Thermally Stimulated Capacitance Curves
- On the Purple and Violet Light Emissions in Thermoluminescing Quartz
- Degeneracy of Activator Energy Levels with Glassy Matrix Intrinsic States
- Electric transport
- Thermally Stimulated Depolarization Currents in Polypropylene Foils
- Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability
- Drift Mobility oi Holes in TlSbS2
- Impurity Photoconductivity and Electrical Properties of Pb 1-x-y GexSnyTe Doped with Indium
- Anomalous Skin Effect in a Cylindrical Conductor
- Multiple Trapping Approach to the TSC Drift Experiment
- Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition
- Thermoelectric Power of Glassy AS40Se 60-xTex
- Device-related phenomena
- Noise Investigation of the Impact Ionization in GaAs
- Ion Beam Mixing of Alternate Au-Ge Layer with GaAs
- Physical and Chemical Changes in the Surface Layer of GaAs Induced by Recoil Implantation of Al Atoms
- Errata
- On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy
- Diffusion of Antimony (125Sb) in Polycrystalline Silicon
- Barrier Height and Its Instability in Al-Ultrathin SiO2 -n/p-Si Devices
- Short Notes
- On the Total Free Energy Differences, at Temperatures near the Melting Point, between Liquid Clusters and Liquid Flat Mono-Layers, Containing the Same Number of Atoms and Both Embedded in a F.C.C. Crystal Matrix
- Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure
- Simulation of Recrystallization of the Depleted Zone at the Thermal Spike
- Chemical Bond Peculiarities of Elements in Amorphous Alloy Surface Layers on the Basis of Fe
- The Far Infrared Spectra of MgAl2-xFexO4 Spinel
- Low-Temperature Heat Capacity of ZnGa2S4, ZnGa2Se4, and ZnGa2Te4 Thiogallates
- Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals
- On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry
- The Influence of Bi on Lattice Parameter and Carrier Concentration of PbTe
- Fracture Model for a Strained Anharmonic Chain Having Atoms with Two Degrees of Freedom
- EPR Monitoring of Annealing Effects in F-Implanted Amorphous Silicon
- Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon
- ε`→ε Transformation in MnAl-C Alloys
- Magnetic Properties of MnAs Single Crystals
- Curie Temperatures of Some Substituted Nd2Fe14B Tetragonal Alloys
- The Effect of Dispersed PLZT Particles on the Electrical Conductivity of Lithium Iodide
- Impurity Photoconductivity of Indium Doped Lead Tin Telluride
- The Resistivity of Dissolved Hydrogen in Palladium and Amorphous Pd80Si20
- Synthesis and Electrical Properties of LixMg1-xM2O4 (M = Ti, V) (0≤x≤1.0)
- Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions
- Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures
- Pre-Printed Titles
Similar Items
-
Physica status solidi. / Volume 2, Number 5, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 6, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 12, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1990 ; Physica Status Solidi (b) Basic research, Volumes 157 to 162. Physica Status Solidi (a) Applied research, Volumes 117 to 122 / / ed. by E. Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1986 ; Physica Status Solidi (b). Basic research, Volumes 133–138. Physica status solidi (a). Applied Research, Volumes 93–98 / / ed. by E. Borchardt.
Published: ([2022])