Physica status solidi / A. / Volume 12, Number 1, : July 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Systematic List
- Review Article
- Electric and Magnetic Properties of Linear Conducting Chains
- Original Papers
- Mossbauer Study of Substituted Rare-Earth Ortho-Ferrites
- Hydrostatic Pressure Effect on Dislocations
- Stacking-Faults in Deformed Molybdenum Diselenide (MoSe2)
- The Epitaxial Growth of H.C.P. Cobalt Evaporated onto LiF Substrates
- Bound-to-Bound Emission at 510 nm in Cadmium Sulphide
- Effect of Impurity Gradient on the Time Delays and Q-Switching in Junction Lasers
- Electrical Transport Properties of Polycrystalline Tellurium Films Deposited on Mica
- Frequency Response of Si-Si02 Interface States on Thin Oxide MOS Capacitors
- Measurements of the Polarizability of Tungsten Adatoms on Tungsten (110) Planes
- An Elastic Model for a Dilute Semi-Crystalline Polymer
- Critical Superparamagnetism
- Dielectric Relaxation in Multi-Domain TGS Single Crystals
- Plastic Deformation and Brittleness of Fe-Co-V
- Effects of Traps on the Acoustoelectric Properties of Photoconducting CdSe
- Luminescence and Photoconductivity of Undoped p-GaSb
- X-Ray-Excited Optical Fluorescence from Pure and Rare-Earth-Doped Magnesium and Calcium Oxides
- The Hole Drift Mobility of Vitreous Selenium
- Photoconductive Properties of PbTe and Pb 0.8 Sn 0.2 Te Epitaxial Films
- Cation Transport in SiO2
- Low-Frequency Current Oscillations in High-Resistivity, Au-Loped Silicon Junctions with Two Schottky Contacts
- NMR of 59Co in K3Co(CN)6 (II)
- Dielectric Properties of Lithium Sulphate at Radio and Microwave Frequencies
- Diffusion von Bor in Silizium aus dotierten Oxiden
- The Effect of the Initial Dislocation Density on Dislocation Multiplication and Work-Hardening Characteristics of Copper Single Crystals
- Gralvanomagnetic Effects in p-Type Germanium
- The Electrical Behavior of CdSe between Room Temperature and 600 °C
- Absorption and Excitation in Multiple Borrmann Diffraction
- Surface Properties of the Gallium Monochalcogenides
- Defect and Excess Regions of the Kikuchi Band
- Silver-Mercury Whiskers
- Localized States and Electron-Hole Processes in BiI3 Crystals
- Diffraction of Light in Magnetic Stripe-Structure
- Thermal Annealing of X-Ray-Induced Defects in Sr-Doped KCl Crystals
- Figure
- Short Notes
- On Some Acoustoelectronic Phenomena in Piezosemiconductors at Large Sound Intensities
- Preparation of ZnSiP2 by a Sublimation Technique
- Displacement of Arsenic Atoms in Silicon Crystal during Irradiation
- Electrical and Structure Sensitive Measurements on Ion Implanted GaAs
- Investigation of Polymorphic Transformations in Ag2Se
- On the Luminescence of LaTaO4
- On the Influence of Nonstoichiometric Deviations of Cadmium Sulphide Powders on Its Electroluminescence Brightness
- Field Effect and Electrical Conductivity in InSb after Heat Treatment
- Interaction between Charges and Librational Excitations in Solid Metal-Ammonia Solutions
- Thermal Change of Permeability with Resonance Type Profiles in Ferrites and Garnets
- Operative Slip Systems inβ-Phase Ag-Cd and Ag-Zn Alloys
- Some Physical Properties of Vitreous As2Se3 Doped with III.A Group Elements
- A Relation of Photoelectric Work Function with Surface Composition on 2.89wt% Si-Fe(100) Single Crystal
- Frequency Dependent Conductivity of Anthracene Single Crystals under Monopolar Injection
- Influence of the Schottky Effect and the Peculiarities in the Distribution of the Applied Voltage on the Thickness of the Depletion Layer and the Volt-Ampere Characteristics of a Semiconductor with Blocking Contact
- Semiconducting Properties of Thallium Telluride
- The Effect of Impurity Atoms on the Recovery of Neutron Irradiated Copper at 78 °K
- Pre-printed Titles
- Author Index
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