Physica status solidi / A. / Volume 115, Number 1, : September 16 / / hrsg. von Görlich.

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Bibliographic Details
Superior document:Title is part of eBook package: De Gruyter DGBA Reference Works <1990
MitwirkendeR:
HerausgeberIn:
Place / Publishing House:Berlin ;, Boston : : De Gruyter, , [2021]
©1989
Year of Publication:2021
Edition:Reprint 2021
Language:German
Series:Physica status solidi / A. ; Volume 115, Number 1
Online Access:
Physical Description:1 online resource (740 p.)
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Table of Contents:
  • Frontmatter
  • Author Index
  • Contents
  • Reyiew Article
  • Photoelectric Anisotropy of II IV-V2 Ternary Semiconductors
  • Original Papers
  • The Many Beam Dynamical Theory of Contrast in Electron Microscope Images of Microtwins for the Non-Symmetrical Laue and Non-Column Cases
  • Optimisation of the Fourier Components of Potential in Bloch Wave TEM Image Contrast Calculations
  • RF Plasma Modification of Heavily Destroyed Ion Implanted Subsurface Silicon Layers
  • Electrical Properties of Superionic Silver-Bora te Glasses Doped with Agl
  • Substitutional Defects in Sb2Te3 Crystals
  • Simulated Quenching of Silicon WSR Monochromators Using WSR Section Topography
  • Structural Phase Transition in the Perovskite-Type Layer Compound (C3H7NH3),PbCl4
  • Mechanical Model of the Bamboo Boundary Internal Friction Peak
  • Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.5 w t% Zn Solid Solution Alloy
  • Stoichiometric Annealing and Electrical Properties of Hgo.3Cdo.2Te Grown by Solid State Recrystallization
  • Application of Thermal Conductivity Measurement by the Relaxation Method to Crystallization Kinetics of Glassy As2Se3 + 1 mol% In
  • Structural Phase Transitions of Layer Compounds KFeF4, KTiF4, and KVF4
  • (CuIn)x(AgIn)!(Mn2ZTe2 Alloys: T(z) Phase Diagram and Optical Energy Gap Values
  • X-Ray Diffraction and Conductivity Investigations of Lanthanum-Doped Barium Titanate Ceramics
  • Determination of the Band Discontinuities of GaSb(n)-Ga0 83Al0.17Sb(p) Heterojunction by Capacitance-Voltage Measurements
  • Influence of Annealing Regimes on Phase Transitions in Nitrogen and Carbon Ion Implanted Molybdenum
  • Dependence of the Temperature Coefficient of the Strain Coefficients of Resistance of Double-Layer Thin Metallic Films on Thermal Strains
  • Characterization of Dielectric Films and Damage Threshold at 1.064 ¡xm
  • Investigation of the Structure and Properties of KCl-NaCl Crystals at Elevated Temperatures
  • Changes in Structure and Properties of NltaOs Anodic Films Caused by Generating Anion Defects on Their Surface
  • Reliability of Tantalum Oxide Film Capacitors
  • A Study of UV/Ozone Cleaning Procedure for Silicon Surfaces
  • Preparation and Faraday Rotation Spectra of YIG:Pb, Pt Garnet Films
  • Structural and Electronic Properties of Evaporated Thin Films of Cadmium Telluride
  • ESR Investigation of the Oxygen Vacancy in Pure and Bi203-Doped ZnO Ceramics
  • Determination of the Germanium Acceptor Ionisation Energy of ALGai-^As (0 ^ * ^ 0.40) by Hall Effect and Luminescence
  • Peculiarities of Galvanomagnetic and Thermoelectric Properties of YBaa-JLaxCuaO?-,» Solid Solutions
  • Multi-Gap Model for Tunneling in High-Tc Superconductors
  • Columnar Structure and Texture [001] in Co-Ni-W Films
  • Bit Analysis of Magnetic Recording Media by Force Microscopy
  • Deep Trapping of Injected Carriers in Ferroelectric Polymer
  • Dielectric Properties of TbAs04 Single Crystals
  • Dielectric Relaxation in Glassy Se and Sei«0_«Te* Alloys2)
  • Optical Properties of Uranium in Potassium Alumino-Phosphate Glasses
  • Defect Annealing in Pure Cdr2 Crystals
  • Mécanismes de thermoluminescence dans des fluorines CaF2 naturelles et de synthèse
  • Short Notes