Electronic phenomena in chemisorption and catalysis on semiconductors. Symposium on Electronic Phenomena in Chemisorption and Catalysis on Semiconductors held in Moscow, July 2-4, 1968 / / hrsg. von Karl Hauffe, Th. Wolkenstein, Symposium on Electronic Phenomena in Chemisorption and Catalysis on Semiconductors ‹1968›.

• Superior document: Title is part of eBook package: De Gruyter DGBA Reference Works <1990
• MitwirkendeR: Banda, Juan F.García De La,; Benson, J.E.,; Bickley, R.I.,; Biklanski, A.,; Boudart, M.,; Crucq, R.Coekelbergs Et A.,; Dereñ, J.,; Gesalov, A.A.,; Gravelle, P.C.,; Hauffe, K .,; Kadenatsi, B.M.,; Kiselev, V.F.,; Koutecký, J.,; Kwan, Takao,; Mikhailenko, I.E.,; Molinari, E.,; Myasnikow, I .A.,; Parravano, G.,; Peshev, O.,; Roginsky, S.Z.,; Shobaky, G.El,; Spitsyn, V.I.,; Stechemesser, R.,; Steinbach, F.,; Stone, F.S.,; Teichner, S.J.,; Tomásek, M.,; Vladimirova, V.I.,; Walters, Arden B.,; Wolkenstein, Th.,; Zhabrova, G.M.,
• HerausgeberIn: Hauffe, Karl,; Symposium on Electronic Phenomena in Chemisorption and Catalysis on Semiconductors ‹1968›, ,; Wolkenstein, Th.,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2019]; ©1969
• Year of Publication: 2019
• Edition: Reprint 2018
• Language: German
• Physical Description: 1 online resource (XII, 261 p.)
• Other title: Frontmatter --; Vorwort - Preface --; Introduction --; Contents --; I. Theory of Semiconductor Catalysis --; 1. Zur Randschicht-Theorie der Adsorption und Katalyse an Halbleiter-Katalysatoren --; 2. Some Basic Concepts of the Electron Theory of Chemisorption and Catalysis on Semiconductors --; II. Mechanism of the Chemisorption Act --; 3. Nature of the Chemisorption Bond on Semiconductor Surfaces --; 4. Various Forms of Chemisorption on Semiconductors --; 5. Electronic Phenomena in the Process of Chemisorption of free Atoms and Radicals on Semiconductor Adsorbents --; III. Mechanism of the Catalytic Act --; 6. Charge Transfer and Surface Oxidation-Reduction Processes during Chemisorption and Catalysis --; 7. Activation of Hydrogen at 79 °K by Supported Copper --; 8. Electronic Processes on the Surface of Solids and Reactivity of Chemisorbed Molecules --; IV. Influence of Impurities on Catalytic and Electronic Properties of Semiconductors --; 9. Election and Ion Defects in Oxidation Catalysis --; 10. Mechanisms of Doping of Nickel Oxide and Their Relation to the Surface Structure of the Solid --; 11. The Use of Lithium as an Altervalent Additive in Oxide Catalyst Research --; 12. Relations between the Electronic and Catalytic Properties of the Semiconducting Oxide Catalysts --; V. Photoeffects in Chemisorption and Catalysis --; 13. Processes of Photoadsorption on Semiconductors and their Relevance to the Electronic Theory of Chemisorption --; 14. Photoadsorption and Photodesorption of Oxygen on Inorganic Semiconductors and Related Photocatalysis --; 15. Photocatalytic Effect of Semiconductors --; 16. Adsorboluminescence on Solids --; VI. Action of Ionizing Radiation on Catalytic and Electronic Properties on Semiconductors and Insulators --; 17. Connexion between Electronic Characteristics and Catalytic Properties of Semiconductors under Irradation --; 18. Electronic Mechanisms of Catalytic and Chemisorption Processes Induced by Ionizing Radiation --; 19. Adsorption et catalyse sous irradiation --; Literature --; Backmatter
• Format: Mode of access: Internet via World Wide Web.
• ISBN: 9783111665832; 9783110637342
• DOI: 10.1515/9783111665832
• Access: restricted access
• Hierarchical level: Monograph
• Statement of Responsibility: hrsg. von Karl Hauffe, Th. Wolkenstein, Symposium on Electronic Phenomena in Chemisorption and Catalysis on Semiconductors ‹1968›.