Nanoelectronics : : Device Physics, Fabrication, Simulation / / Joachim Knoch.
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devic...
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Superior document: | Title is part of eBook package: De Gruyter DG Ebook Package English 2021 |
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Place / Publishing House: | München ;, Wien : : De Gruyter Oldenbourg, , [2020] ©2021 |
Year of Publication: | 2020 |
Language: | English |
Series: | De Gruyter Textbook
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Online Access: | |
Physical Description: | 1 online resource (XVI, 390 p.) |
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100 | 1 | |a Knoch, Joachim, |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
245 | 1 | 0 | |a Nanoelectronics : |b Device Physics, Fabrication, Simulation / |c Joachim Knoch. |
264 | 1 | |a München ; |a Wien : |b De Gruyter Oldenbourg, |c [2020] | |
264 | 4 | |c ©2021 | |
300 | |a 1 online resource (XVI, 390 p.) | ||
336 | |a text |b txt |2 rdacontent | ||
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338 | |a online resource |b cr |2 rdacarrier | ||
347 | |a text file |b PDF |2 rda | ||
490 | 0 | |a De Gruyter Textbook | |
505 | 0 | 0 | |t Frontmatter -- |t Preface -- |t How to Use the Book -- |t Contents -- |t 1 Introduction -- |t 2 Solid-State Physics Foundation -- |t 3 Semiconductor Fabrication -- |t 4 Basic Ingredients for Nanoelectronics Devices -- |t 5 Metal–Oxide–Semiconductor Field-Effect Transistors -- |t 6 Device Simulation -- |t 7 Metal–Source–Drain Field-Effect Transistors -- |t 8 Carbon Nanotube Field-Effect Transistors -- |t 9 Steep Slope Transistors -- |t 10 Device Based on Two-Dimensional Materials -- |t A Color Map for 2D Materials -- |t Bibliography -- |t Index |
506 | 0 | |a restricted access |u http://purl.org/coar/access_right/c_16ec |f online access with authorization |2 star | |
520 | |a The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well. | ||
530 | |a Issued also in print. | ||
538 | |a Mode of access: Internet via World Wide Web. | ||
546 | |a In English. | ||
588 | 0 | |a Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
650 | 4 | |a Field Effect Transistors. | |
650 | 4 | |a Two-Dimensional Materials. | |
650 | 7 | |a SCIENCE / Physics / Condensed Matter. |2 bisacsh | |
653 | |a Field Effect Transistors. | ||
653 | |a Metal-Oxide Semiconductor. | ||
653 | |a Nanoelectronic Devices. | ||
653 | |a Semiconductor. | ||
653 | |a Transistors. | ||
653 | |a Two-Dimensional Materials. | ||
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773 | 0 | 8 | |i Title is part of eBook package: |d De Gruyter |t De Gruyter English eBooks 2020 - UC |z 9783110659061 |
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