Nonvolatile memory design : magnetic, resistive, and phase change /

Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen.

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Li, Hai, 1975-
TeilnehmendeR:
Chen, Yiran, 1976-
ProQuest (Firm)
Year of Publication:2012
Language:English
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Physical Description:xiv, 184 p. :; ill.
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record_format marc
spelling Li, Hai, 1975-
Nonvolatile memory design [electronic resource] : magnetic, resistive, and phase change / Hai Li, Yiran Chen.
Boca Raton, Fla. : Taylor & Francis, c2012.
xiv, 184 p. : ill.
Includes bibliographical references.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Semiconductor storage devices.
Magnetic memory (Computers)
Flash memories (Computers)
Change of state (Physics) Industrial applications.
Electronic books.
Chen, Yiran, 1976-
ProQuest (Firm)
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=826926 Click to View
language English
format Electronic
eBook
author Li, Hai, 1975-
spellingShingle Li, Hai, 1975-
Nonvolatile memory design magnetic, resistive, and phase change /
author_facet Li, Hai, 1975-
Chen, Yiran, 1976-
ProQuest (Firm)
ProQuest (Firm)
author_variant h l hl
author2 Chen, Yiran, 1976-
ProQuest (Firm)
author2_variant y c yc
author2_role TeilnehmendeR
TeilnehmendeR
author_corporate ProQuest (Firm)
author_sort Li, Hai, 1975-
title Nonvolatile memory design magnetic, resistive, and phase change /
title_sub magnetic, resistive, and phase change /
title_full Nonvolatile memory design [electronic resource] : magnetic, resistive, and phase change / Hai Li, Yiran Chen.
title_fullStr Nonvolatile memory design [electronic resource] : magnetic, resistive, and phase change / Hai Li, Yiran Chen.
title_full_unstemmed Nonvolatile memory design [electronic resource] : magnetic, resistive, and phase change / Hai Li, Yiran Chen.
title_auth Nonvolatile memory design magnetic, resistive, and phase change /
title_new Nonvolatile memory design
title_sort nonvolatile memory design magnetic, resistive, and phase change /
publisher Taylor & Francis,
publishDate 2012
physical xiv, 184 p. : ill.
isbn 9781439807460 (electronic bk.)
callnumber-first T - Technology
callnumber-subject TK - Electrical and Nuclear Engineering
callnumber-label TK7895
callnumber-sort TK 47895 M4 L385 42012
genre Electronic books.
genre_facet Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=826926
illustrated Illustrated
oclc_num 899154965
work_keys_str_mv AT lihai nonvolatilememorydesignmagneticresistiveandphasechange
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AT proquestfirm nonvolatilememorydesignmagneticresistiveandphasechange
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is_hierarchy_title Nonvolatile memory design magnetic, resistive, and phase change /
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