CVD Growth of SiC for High-Power and High-frequency Applications.

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Bibliographic Details
Superior document:Linköping Studies in Science and Technology. Dissertations Series ; v.1973
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Place / Publishing House:Linköping : : Linkopings Universitet,, 2019.
{copy}2019.
Year of Publication:2019
Edition:1st ed.
Language:English
Series:Linköping Studies in Science and Technology. Dissertations Series
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Physical Description:1 online resource (55 pages)
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Table of Contents:
  • Intro
  • ABSTRACT
  • POPULÄRVETENSKAPLIG SAMMANFATTNING
  • PAPERS INCLUDED IN THE THESIS
  • PAPERS NOT INCLUDED IN THE THESIS
  • ACKNOWLEDGMENTS
  • CONTENTS
  • 1. INTRODUCTION
  • 2. SILICON CARBIDE
  • 3. ELECTRONIC DEVICES
  • 4. GROWTH
  • 5. DEFECTS
  • 6. CHARACTERIZATION
  • 7. REFERENCES
  • SUMMARY OF PAPERS
  • MY CONTRIBUTION TO THE PAPERS
  • Papers.