Vertical GaN and SiC power devices /

Vertical GaN and SiC power devices / / Kazuhiro Mochizuki.

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Bibliographic Details
VerfasserIn:
Mochizuki, Kazuhiro,
Place / Publishing House:Boston, Massachusetts ;, London, [England] : : Artech House,, 2018.
Year of Publication:2018
Language:English
Online Access:
Physical Description:1 online resource (xii, 263 pages)
Notes:Includes index.
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035 |a (MiAaPQ)5005430727 
035 |a (Au-PeEL)EBL5430727 
035 |a (OCoLC)1039940704 
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100 1 |a Mochizuki, Kazuhiro,  |e author. 
245 1 0 |a Vertical GaN and SiC power devices /  |c Kazuhiro Mochizuki. 
264 1 |a Boston, Massachusetts ;  |a London, [England] :  |b Artech House,  |c 2018. 
300 |a 1 online resource (xii, 263 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
500 |a Includes index. 
588 |a Description based on print version record. 
590 |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2018. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. 
650 0 |a Gallium nitride. 
655 4 |a Electronic books. 
776 0 8 |i Print version:  |a Mochizuki, Kazuhiro.  |t Vertical GaN and SiC power devices.  |d Boston, Massachusetts ; London, [England] : Artech House, 2018   |h xii, 263 pages   |z 9781630814274 
797 2 |a ProQuest (Firm) 
856 4 0 |u https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5430727  |z Click to View 

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