The physics and modeling of MOSFETS : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki.

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Bibliographic Details
Superior document:International series on advances in solid state electronics and technology
:
TeilnehmendeR:
Year of Publication:2008
Language:English
Series:International series on advances in solid state electronics and technology.
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Physical Description:xxii, 352 p. :; ill.
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245 1 4 |a The physics and modeling of MOSFETS  |h [electronic resource] :  |b surface-potential model HiSIM /  |c Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki. 
260 |a Singapore ;  |a Hackensack, NJ :  |b World Scientific,  |c c2008. 
300 |a xxii, 352 p. :  |b ill.  
490 1 |a International series on advances in solid state electronics and technology 
504 |a Includes bibliographical references and index. 
533 |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. 
650 0 |a Metal oxide semiconductor field-effect transistors. 
650 0 |a Metal oxide semiconductor field-effect transistors  |x Mathematical models. 
655 4 |a Electronic books. 
700 1 |a Mattausch, Hans Jurgen. 
700 1 |a Ezaki, Tatsuya. 
710 2 |a ProQuest (Firm) 
830 0 |a International series on advances in solid state electronics and technology. 
856 4 0 |u https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3050949  |z Click to View