Epitaxy of Group III-Nitride Materials Using Different Nucleation Schemes.

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Bibliographic Details
Superior document:Linköping Studies in Science and Technology. Dissertations Series ; v.2296
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Place / Publishing House:Linköping : : Linkopings Universitet,, 2023.
{copy}2023.
Year of Publication:2023
Edition:1st ed.
Language:English
Series:Linköping Studies in Science and Technology. Dissertations Series
Online Access:
Physical Description:1 online resource (98 pages)
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Table of Contents:
  • Intro
  • ABSTRACT
  • POPULÄRVETENSKAPLIG SAMMANFATTNING
  • PREFACE
  • ACKNOWLEDGEMENT
  • Contents
  • Introduction
  • GaN and related materials
  • Crystal growth from vapor phase
  • Techniques for GaN growth
  • Characterization techniques
  • Summary of main results
  • References
  • Papers.